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Janus TiClI单层和范德华双层的电子性质

Electronic Properties of Monolayer and van der Waals Bilayer of Janus TiClI.

作者信息

Zhang Shuhui, Wang Yuanyuan, Wang Shuhua, Huang Baibiao, Dai Ying, Wei Wei

机构信息

School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.

出版信息

J Phys Chem Lett. 2021 Mar 11;12(9):2245-2251. doi: 10.1021/acs.jpclett.1c00149. Epub 2021 Feb 26.

Abstract

In this work, the novel electronic properties of the Janus TiClI monolayer (ML) and van der Waals (vdW) bilayers (BLs) have been demonstrated. As a result of the strong spin-orbit coupling (SOC) together with the inversion symmetry breaking, the TiClI ML shows valley spin splitting of 62.67 meV at the K/K' point. In magnetic V- and Cr-doped TiClI MLs, sizable valley polarization of 36.70 and 45.35 meV occurs, respectively. TiClI vdW BLs indicate typical type-II band alignment with a quite large band offset (>500 meV), and interestingly, the interlayer-polarization is almost 100% for all considered stacking orders. In addition, the interlayer-polarization is insensitive to the interlayer distance. In this situation, the interlayer exciton and valley polarization lifetimes could be prolonged, and thus, TiClI vdW BLs provide new opportunities for light-energy conversion and valleytronics. As the interlayer distance decreases, the TiClI BLs of AB' and AB stacking indicate a semiconductor-to-metal transition and are characterized by hole-doping, and the doping concentration can be further tuned by changing the interlayer distance.

摘要

在这项工作中,已证明了Janus TiClI单层(ML)和范德华(vdW)双层(BLs)的新型电子特性。由于强自旋轨道耦合(SOC)以及反演对称性破缺,TiClI ML在K/K'点处显示出62.67 meV的谷自旋分裂。在磁性V掺杂和Cr掺杂的TiClI ML中,分别出现了36.70和45.35 meV的可观谷极化。TiClI vdW BLs表现出典型的II型能带排列,具有相当大的带隙(>500 meV),有趣的是,对于所有考虑的堆叠顺序,层间极化几乎为100%。此外,层间极化对层间距离不敏感。在这种情况下,层间激子和谷极化寿命可以延长,因此,TiClI vdW BLs为光能转换和谷电子学提供了新的机会。随着层间距离减小,AB'和AB堆叠的TiClI BLs表现出半导体到金属的转变,并以空穴掺杂为特征,并且掺杂浓度可以通过改变层间距离进一步调节。

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