Shimoi Norihiro, Tanaka Shun-Ichiro
Graduate School of Environmental Studies, Tohoku University, 6-6-20 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan.
Micro System Integration Center, Tohoku University, 519-1176 Aoba, Aramaki, Aoba-ku, Sendai 980-0845, Japan.
Rev Sci Instrum. 2021 Feb 1;92(2):023905. doi: 10.1063/5.0011661.
Ceramic particles, such as titanium oxide and indium tin oxide, are expected to be used as electric or catalytic materials for various applications. In this work, we progressed to employ the irradiation with an electron beam as the nonequilibrium reaction field for ceramic composition, and we successfully obtained the basic technology for a ceramic thin-film fabrication using a field emission (FE) electron beam with low energy resolution having a half width under 100 meV that had a homogeneous planar electron emission as the nonequilibrium reaction field. In particular, ZnO particles synthesized by electron beam irradiation show selective crystal bridging along the c-axis during FE electron beam irradiation, which is important for synthesizing poly-ZnO crystals without a heating process, because the energy fluctuations of FE electron beams are small and affect the directionality of ZnO crystal growth along the c-axis. This accomplishment may make a significant contribution to the analysis of the formation mechanism of ZnO particles with a uniform morphology and crystal structure by the FE electron beam during the crystallization. Moreover, we will be able to provide basic elements for next-generation nanodevices with highly functional properties by controlling each terminal crystal interface of metals, ceramics, and semiconductors with this technique.
诸如氧化钛和氧化铟锡等陶瓷颗粒有望用作各种应用的电材料或催化材料。在这项工作中，我们着手采用电子束辐照作为陶瓷成分的非平衡反应场，并且成功获得了一种使用场发射（FE）电子束制造陶瓷薄膜的基础技术，该电子束具有低能量分辨率，半高宽低于100毫电子伏特，且具有均匀的平面电子发射作为非平衡反应场。特别地，通过电子束辐照合成的ZnO颗粒在FE电子束辐照期间沿c轴显示出选择性晶体桥接，这对于在无加热过程的情况下合成多ZnO晶体很重要，因为FE电子束的能量波动很小，并且会影响ZnO晶体沿c轴生长的方向性。这一成果可能会对通过FE电子束在结晶过程中形成具有均匀形态和晶体结构的ZnO颗粒的形成机制分析做出重大贡献。此外，通过用该技术控制金属、陶瓷和半导体的每个终端晶体界面，我们将能够为具有高功能特性的下一代纳米器件提供基础元件。
