Shimoi Norihiro
Department of Electrical and Electric Engineering, Tohoku Institute of Technology, 35-1 Yagiyama, Kasumicho, Taihaku-ku, Sendai, Miyagi 982-8577, Japan.
ACS Omega. 2023 Oct 13;8(42):39673-39679. doi: 10.1021/acsomega.3c05608. eCollection 2023 Oct 24.
The authors have developed a crystal growth process that utilizes electron beams from field emission (FE) to grow materials bottom-up by a method other than the transfer of thermal energy. In this study, highly crystalline single-walled carbon nanotubes were used as a field emission electron source. Electron beams with high resolution energy emitted from the source were irradiated onto acetylene gas as a nonequilibrium reaction field to induce acetylene dissociation. The generated carbon ions were then irradiated onto a [100] silicon substrate, resulting in the irradiation of the silicon substrate surface with graphene. Moreover, the crystal growth of sp2/sp3 hybrid carbon thin layers, which is different from the crystal structures of graphite, diamond, and diamond-like carbon, proceeded on the surface of the silicon substrate. Carbon layers on periodic crystal structures whose growth depends at least on the morphology of the substrate are formed through bridging with the binding site of the substrate. The authors have succeeded in developing a nonthermal technique of crystal bridging between different elements. The substrate on which the carbon layer is formed is not limited to silicon; other substrates with various crystal structures and periodicities are expected to be used.
作者开发了一种晶体生长工艺，该工艺利用场发射（FE）产生的电子束，通过非热能传递的方法自下而上地生长材料。在本研究中，高度结晶的单壁碳纳米管被用作场发射电子源。从该源发射的具有高分辨率能量的电子束被照射到作为非平衡反应场的乙炔气体上，以诱导乙炔解离。然后将产生的碳离子照射到[100]硅衬底上，从而用石墨烯照射硅衬底表面。此外，与石墨、金刚石和类金刚石碳的晶体结构不同的sp2/sp3混合碳薄层的晶体生长在硅衬底表面进行。通过与衬底的结合位点桥接，在至少取决于衬底形态的周期性晶体结构上形成碳层。作者成功开发了一种不同元素之间晶体桥接的非热技术。形成碳层的衬底不限于硅；预计还会使用具有各种晶体结构和周期性的其他衬底。
