Nath Amitabha, Raman Rahul, Robindro Singh Laishram, Sarkar Mitra Barun
Department of Electronics and Communication Engineering, National Institute of Technology Agartala, Jirania, West Tripura 799046, India.
Department of Nanotechnology, North Eastern Hill University, Umshing Mawkynroh, Shillong 793022, Meghalaya, India.
J Nanosci Nanotechnol. 2021 May 1;21(5):3115-3122. doi: 10.1166/jnn.2021.19280.
Glancing angle deposition (GLAD) oriented electron beam (e-beam) evaporation process has been employed to develop 1D In₂O₃ nanorod array over -Si substrate. The morphology of as-deposited In₂O₃ thin film (∼70 nm) and GLAD 1D In₂O₃ nanorod array (∼400 nm) were explored using field emission scanning electron microscopy (FESEM), energy dispersive spectroscopy (EDS) and high resolution transmission electron microscopy (HRTEM) analysis. The structural analysis were perceived by high-resolution X-ray diffraction (HRXRD) and atomic force microscopy (AFM) techniques. The clampdown of ∼4.4 fold photoluminescence (PL) emission intensity was observed for In₂O₃ nanorod array. Metallization were done to measure the current ()-voltage (V) characteristics for -Si/In₂O₃ thin film and -Si/In₂O₃ nanorod devices. The In₂O₃ nanorod device displayed ∼2.2 fold enhancement in current conduction at -4.6 V and an averagely ∼1.1 fold augmentation in photosensitivity were also observed. The photoresponsivity of ∼28 A/W, maximum specific detectivity of ∼9.9×10 Jones and low NEP of ∼4.5×10 W/√Hz was achieved for the In₂O₃ nanorod-based photodetectors. The maximum ∼2.5 fold high detectivity and ∼2.4 fold low noise equivalent power (NEP) were perceived for the 1D In₂O₃ nanorod array detector as compared to the bare In₂O₃ thin film detector.
