E-beam synthesized fast-switching TiO/SnO type-II heterostructure photodetector.

A fast-switching / heterostructure thin-film (TF) photodetector synthesized by electron beam evaporation technique is analyzed in this study. The substrate utilized is n-type silicon (Si), while gold (Au) is employed as the top electrode. To assess sample morphology and confirm elemental composition, field emission scanning electron microscopy (FESEM), energy dispersive x-ray spectroscopy (EDS), and chemical mapping were conducted. Structural characteristics were determined using X-ray diffraction (XRD) analysis. The XRD analysis confirmed the presence of various phases of (anatase and rutile) and (rutile). UV-Vis spectroscopy revealed multiple absorption peaks, at 447 nm, 495 nm, 560 nm, and 673 nm, within the visible spectrum. The device demonstrates high detectivity ( ) of 1.737×10 Jones and a low noise equivalent power (NEP) of 0.765×10 . Evaluation of the device's switching response through current-time characteristic (I-T) analysis indicates rapid switching with a rise time and fall time of 0.33 s and 0.36 s, respectively.