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单电子InP/GaInP量子点磁光致发光光谱中的分数电荷态

Fractional Charge States in the Magneto-Photoluminescence Spectra of Single-Electron InP/GaInP Quantum Dots.

作者信息

Mintairov Alexander, Lebedev Dmitrii, Vlasov Alexei, Bogdanov Andrey, Ramezanpour Shahab, Blundell Steven

机构信息

Ioffe Physical-Technical Institute of the Russian Academy of Sciences, 194021 St. Petersburg, Russia.

Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, USA.

出版信息

Nanomaterials (Basel). 2021 Feb 16;11(2):493. doi: 10.3390/nano11020493.

DOI:10.3390/nano11020493
PMID:33669253
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7920047/
Abstract

We used photoluminescence spectra of single electron quasi-two-dimensional InP/GaInP islands having Wigner-Seitz radius ~4 to measure the magnetic-field dispersion of the lowest , , and single-particle states in the range 0-10 T. The measured dispersion revealed up to a nine-fold reduction of the cyclotron frequency, indicating the formation of nano-superconducting anyon or magneto-electron () states, in which the corresponding number of magnetic-flux-quanta vortexes and fractional charge were self-generated. We observed a linear increase in the number of vortexes versus the island size, which corresponded to a critical vortex radius equal to the Bohr radius and closed-packed topological vortex arrangements. Our observation explains the microscopic mechanism of vortex attachment in composite fermion theory of the fractional quantum Hall effect, allows its description in terms of self-localization of s and represents progress towards the goal of engineering anyon properties for fault-tolerant topological quantum gates.

摘要

我们使用具有维格纳-赛茨半径约为4的单电子准二维InP/GaInP岛的光致发光光谱,来测量0至10 T范围内最低的、、单粒子态的磁场色散。测量得到的色散显示回旋频率降低了九倍之多,这表明形成了纳米超导任意子或磁电子()态,其中相应数量的磁通量量子涡旋和分数电荷是自发生成的。我们观察到涡旋数量随岛尺寸呈线性增加,这对应于一个等于玻尔半径的临界涡旋半径以及密排拓扑涡旋排列。我们的观察解释了分数量子霍尔效应复合费米子理论中涡旋附着的微观机制,允许根据s的自定位对其进行描述,并朝着为容错拓扑量子门设计任意子特性的目标迈进了一步。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7ac5/7920047/73148007d14b/nanomaterials-11-00493-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7ac5/7920047/b0a42d0fee0c/nanomaterials-11-00493-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7ac5/7920047/0740bef9cc42/nanomaterials-11-00493-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7ac5/7920047/227a78fb770a/nanomaterials-11-00493-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7ac5/7920047/1ee3554206e0/nanomaterials-11-00493-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7ac5/7920047/3e55b790aad9/nanomaterials-11-00493-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7ac5/7920047/73148007d14b/nanomaterials-11-00493-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7ac5/7920047/b0a42d0fee0c/nanomaterials-11-00493-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7ac5/7920047/0740bef9cc42/nanomaterials-11-00493-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7ac5/7920047/227a78fb770a/nanomaterials-11-00493-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7ac5/7920047/1ee3554206e0/nanomaterials-11-00493-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7ac5/7920047/3e55b790aad9/nanomaterials-11-00493-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7ac5/7920047/73148007d14b/nanomaterials-11-00493-g006.jpg

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