Park Youngseo, Ma Jiyeon, Yoo Geonwook, Heo Junseok
Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, Korea.
School of Electronic Engineering, Soongsil University, Seoul 06938, Korea.
Nanomaterials (Basel). 2021 Feb 16;11(2):494. doi: 10.3390/nano11020494.
Interface traps between a gate insulator and beta-gallium oxide (-GaO) channel are extensively studied because of the interface trap charge-induced instability and hysteresis. In this work, their effects on mobility degradation at low temperature and hysteresis at high temperature are investigated by characterizing electrical properties of the device in a temperature range of 20-300 K. As acceptor-like traps at the interface are frozen below 230 K, the hysteresis becomes negligible but simultaneously the channel mobility significantly degrades because the inactive neutral traps allow additional collisions of electrons at the interface. This is confirmed by the fact that a gate bias adversely affects the channel mobility. An activation energy of such traps is estimated as 170 meV. The activated trap charges' trapping and de-trapping processes in response to the gate pulse bias reveal that the time constants for the slow and fast processes decrease due to additionally activated traps as the temperature increases.
由于界面陷阱电荷引起的不稳定性和滞后现象，栅极绝缘体与β-氧化镓（β-GaO）沟道之间的界面陷阱受到了广泛研究。在这项工作中，通过在20 - 300 K的温度范围内表征器件的电学特性，研究了它们对低温下迁移率退化和高温下滞后现象的影响。由于界面处类似受主的陷阱在230 K以下被冻结，滞后现象变得可以忽略不计，但同时沟道迁移率显著退化，因为非活性中性陷阱允许电子在界面处发生额外碰撞。栅极偏压对沟道迁移率产生不利影响这一事实证实了这一点。此类陷阱的激活能估计为170 meV。响应于栅极脉冲偏压，激活陷阱电荷的俘获和去俘获过程表明，随着温度升高，由于额外激活的陷阱，慢速和快速过程的时间常数都会减小。
