Wang Xiao, Shen Zhihua, Li Jie, Wu Shengli
School of Electronic Information and Artificial Intelligence, Shaanxi University of Science and Technology, Xi'an 710049, China.
School of Electronics and Information Engineering, Nantong Vocational University, Nantong 226007, China.
Membranes (Basel). 2021 Feb 14;11(2):134. doi: 10.3390/membranes11020134.
IGZO thin films can be used as active layers of thin-film transistors and have been widely studied. However, amorphous indium gallium zinc oxide (IGZO) fabricated at room temperature is vulnerable in subsequent manufacturing processes, such as etching and sputtering; this limits IGZO thin film transistors' (TFTs) use in commercial products. In this paper, we prepared a c-axis crystallized IGZO thin film by Radio Frequency (RF) sputtering at 180 °C, with a 50% O ratio and 110 W power. XRD images show that the crystallized film has an obvious diffraction peak near 31°, and the spacing between the crystal surfaces was calculated to be ≈0.29 nm. The HRTEM map confirmed the above results. The stability of IGZO thin films was investigated by etching them with an acid solution. The crystalline IGZO films exhibited better acid corrosion resistance, and their anticorrosion performance was 74% higher than that of amorphous IGZO (a-IGZO) films, indicating the crystalline IGZO film can provide more stable performance in applications.
铟镓锌氧化物（IGZO）薄膜可作为薄膜晶体管的有源层，并且已经得到了广泛研究。然而，室温下制备的非晶铟镓锌氧化物（IGZO）在后续制造工艺（如蚀刻和溅射）中易受影响；这限制了IGZO薄膜晶体管（TFT）在商业产品中的应用。在本文中，我们通过射频（RF）溅射在180°C、氧比为50%和功率为110W的条件下制备了c轴结晶的IGZO薄膜。X射线衍射（XRD）图像显示，结晶薄膜在31°附近有明显的衍射峰，计算得出晶体表面间距约为0.29nm。高分辨率透射电子显微镜（HRTEM）图谱证实了上述结果。通过用酸溶液蚀刻来研究IGZO薄膜的稳定性。结晶IGZO薄膜表现出更好的耐酸腐蚀性，其防腐性能比非晶IGZO（a-IGZO）薄膜高74%，表明结晶IGZO薄膜在应用中可以提供更稳定的性能。
