Kim Kyungho, Park Jun-Woo, Lee Donggun, Cho Yong Hyun, Kim Youn Sang
Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea.
Samsung Display Company, Ltd, 1 Samsung-ro, Giheung-gu, Yongin-si, Gyeonggi-do 17113, Republic of Korea.
ACS Appl Mater Interfaces. 2021 Jan 13;13(1):878-886. doi: 10.1021/acsami.0c17872. Epub 2021 Jan 4.
Recently, metal-insulator-oxide semiconductor-metal (MIOSM) thin-film diodes (TFDs) have received attention as next-generation diodes due to their high rectification ratio and broad option on the operating voltage range. Nevertheless, precise turn-on voltage control of the MIOSM TFDs has been required for circuit design convenience. Here, we present a simple and accurate method of controlling the turn-on voltage of MIOSM TFDs. Studies on current-voltage characteristics reveal that controlling carrier injection into trap states in an insulator by oxygen vacancy variation of the oxide semiconductor plays a key role in the turn-on voltage shift of MIOSM TFDs. Moreover, by controlling the trap states in the insulator, the finely tuned turn-on voltages of the MIOSM TFDs are demonstrated for both low-voltage- and high-voltage-driving diodes. MIOSM TFDs with adjustable turn-on voltage, which can be built more efficiently and accurately, are expected to make oxide-based circuit designs more precise and straightforward.
最近，金属-绝缘体-氧化物半导体-金属（MIOSM）薄膜二极管（TFD）因其高整流比和宽工作电压范围选择而受到关注，被视为下一代二极管。然而，为了便于电路设计，需要对MIOSM TFD的开启电压进行精确控制。在此，我们提出了一种简单且精确的控制MIOSM TFD开启电压的方法。对电流-电压特性的研究表明，通过氧化物半导体的氧空位变化来控制载流子注入绝缘体中的陷阱态，在MIOSM TFD的开启电压偏移中起关键作用。此外，通过控制绝缘体中的陷阱态，展示了针对低压驱动二极管和高压驱动二极管的MIOSM TFD的精细调谐开启电压。具有可调开启电压的MIOSM TFD有望使基于氧化物的电路设计更高效、准确，从而更精确和直接。
