• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

石墨烯中近红外到远红外范围直接带隙的引入:第一性原理洞察

Introduction of Near to Far Infrared Range Direct Band Gaps in Graphene: A First Principle Insight.

作者信息

Kumar Jeevesh, Shrivastava Mayank

机构信息

Department of Electronic Systems Engineering, Indian Institute of Science, Bangalore 560012, India.

出版信息

ACS Omega. 2021 Feb 18;6(8):5619-5626. doi: 10.1021/acsomega.0c06058. eCollection 2021 Mar 2.

DOI:10.1021/acsomega.0c06058
PMID:33681601
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7931398/
Abstract

Lack of band gaps hinders application of graphene in the fields like logic, optoelectronics, and sensing despite its various extraordinary properties. In this work, we have done systematic investigations on direct band gap opening in graphene by hydrogenation and fluorination of carbon vacancies using the density functional theory computational approach. We have seen that although a carbon vacancy (void) opens an indirect band gap in graphene, it also creates unwanted mid gap (trap) states, which is attributed to unbound orbitals of the nearest unsaturated carbon atoms at the vacant site. The unsaturated carbon atoms and corresponding trap states can degrade the stability of graphene and create band gaps particularly for large size vacancies. We have proposed that hydrogenation or fluorination of the unsaturated carbon atoms near the vacant site helps in disappearance of the trap states while contributing to promising direct band gaps in graphene. The opened band gap is tunable in the infrared regime and persists for different sizes and densities of hydrogenated or fluorinated patterns. In addition, we have also found that the proposed approach is thermodynamically favorable as well as stable. This keeps the planar nature of the graphene monolayer, despite creation of defects and subsequent functionalization, thereby making it useful for 2D material-based electronics, optoelectronics, and sensing applications.

摘要

尽管石墨烯具有各种非凡特性,但缺乏带隙阻碍了其在逻辑、光电子和传感等领域的应用。在这项工作中,我们使用密度泛函理论计算方法,对通过碳空位的氢化和氟化在石墨烯中打开直接带隙进行了系统研究。我们发现,虽然碳空位(空洞)在石墨烯中打开了一个间接带隙,但它也产生了不需要的中间能隙(陷阱)态,这归因于空位处最近的不饱和碳原子的未结合轨道。不饱和碳原子和相应的陷阱态会降低石墨烯的稳定性,并产生带隙,特别是对于大尺寸空位。我们提出,空位附近不饱和碳原子的氢化或氟化有助于陷阱态的消失,同时在石墨烯中产生有前景的直接带隙。打开的带隙在红外区域是可调的,并且对于不同尺寸和密度的氢化或氟化图案都能持续存在。此外,我们还发现,所提出方法在热力学上是有利且稳定的。尽管会产生缺陷并随后进行功能化处理,但这保持了石墨烯单层的平面性质,从而使其可用于基于二维材料的电子、光电子和传感应用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/da15/7931398/5cbd1ca58f5b/ao0c06058_0011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/da15/7931398/5357ec3ebafe/ao0c06058_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/da15/7931398/7cb3db0d359b/ao0c06058_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/da15/7931398/dc9841f3b613/ao0c06058_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/da15/7931398/2da61959104a/ao0c06058_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/da15/7931398/f81a08d9fa63/ao0c06058_0006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/da15/7931398/8423f8ffbda2/ao0c06058_0007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/da15/7931398/13555d0b35a7/ao0c06058_0008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/da15/7931398/ef1bff7e1365/ao0c06058_0009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/da15/7931398/1eaa28586cc5/ao0c06058_0010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/da15/7931398/5cbd1ca58f5b/ao0c06058_0011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/da15/7931398/5357ec3ebafe/ao0c06058_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/da15/7931398/7cb3db0d359b/ao0c06058_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/da15/7931398/dc9841f3b613/ao0c06058_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/da15/7931398/2da61959104a/ao0c06058_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/da15/7931398/f81a08d9fa63/ao0c06058_0006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/da15/7931398/8423f8ffbda2/ao0c06058_0007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/da15/7931398/13555d0b35a7/ao0c06058_0008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/da15/7931398/ef1bff7e1365/ao0c06058_0009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/da15/7931398/1eaa28586cc5/ao0c06058_0010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/da15/7931398/5cbd1ca58f5b/ao0c06058_0011.jpg

相似文献

1
Introduction of Near to Far Infrared Range Direct Band Gaps in Graphene: A First Principle Insight.石墨烯中近红外到远红外范围直接带隙的引入:第一性原理洞察
ACS Omega. 2021 Feb 18;6(8):5619-5626. doi: 10.1021/acsomega.0c06058. eCollection 2021 Mar 2.
2
Stone-Wales Defect and Vacancy-Assisted Enhanced Atomic Orbital Interactions Between Graphene and Ambient Gases: A First-Principles Insight.斯通-威尔士缺陷与空位辅助增强的石墨烯与环境气体之间的原子轨道相互作用:第一性原理洞察
ACS Omega. 2020 Nov 25;5(48):31281-31288. doi: 10.1021/acsomega.0c04729. eCollection 2020 Dec 8.
3
Band gaps and structural properties of graphene halides and their derivates: a hybrid functional study with localized orbital basis sets.石墨烯卤化物及其衍生物的能带隙和结构性质:基于局域轨道基组的杂化泛函研究。
J Chem Phys. 2012 Jul 21;137(3):034709. doi: 10.1063/1.4736998.
4
Electronic Structures, Bonding Configurations, and Band-Gap-Opening Properties of Graphene Binding with Low-Concentration Fluorine.石墨烯与低浓度氟结合的电子结构、键合构型及带隙开启特性
ChemistryOpen. 2015 Oct;4(5):642-50. doi: 10.1002/open.201500074. Epub 2015 Jun 18.
5
Surface-catalyzed C-C covalent coupling strategies toward the synthesis of low-dimensional carbon-based nanostructures.表面催化的 C-C 共价偶联策略在低维碳基纳米结构合成中的应用。
Acc Chem Res. 2015 Aug 18;48(8):2484-94. doi: 10.1021/acs.accounts.5b00168. Epub 2015 Jul 21.
6
Tunable doping and band gap of graphene on functionalized hexagonal boron nitride with hydrogen and fluorine.石墨烯在功能化六方氮化硼上的可调掺杂和带隙:氢和氟的作用。
Phys Chem Chem Phys. 2013 Apr 14;15(14):5067-77. doi: 10.1039/c3cp44460k.
7
Tunable Electronic Properties of Lateral Monolayer Transition Metal Dichalcogenide Superlattice Nanoribbons.横向单层过渡金属二硫属化物超晶格纳米带的可调电子性质
Nanomaterials (Basel). 2021 Feb 19;11(2):534. doi: 10.3390/nano11020534.
8
Tuning the electronic and mechanical properties of penta-graphene via hydrogenation and fluorination.通过氢化和氟化调节五边形石墨烯的电学和力学性能。
Phys Chem Chem Phys. 2016 Jun 7;18(21):14191-7. doi: 10.1039/c6cp01092j. Epub 2016 Apr 11.
9
Chemical and substitutional doping, and anti-site and vacancy formation in monolayer AlN and GaN.单层 AlN 和 GaN 中的化学和取代掺杂以及反位和空位形成。
Phys Chem Chem Phys. 2018 Jun 13;20(23):16077-16091. doi: 10.1039/c8cp02188k.
10
Quasiparticle band gap engineering of graphene and graphone on hexagonal boron nitride substrate.在六方氮化硼衬底上对石墨烯和石墨炔的准粒子能带隙进行工程设计。
Nano Lett. 2011 Dec 14;11(12):5274-8. doi: 10.1021/nl202725w. Epub 2011 Oct 27.

引用本文的文献

1
Exploring the Influence of Carbonaceous Material on the Photocatalytic Performance of the Composites Containing Bi-BiOBr and P25 TiO for NO Remediation.探索含Bi-BiOBr和P25 TiO₂的复合材料中碳质材料对光催化去除NO性能的影响。
Chemphyschem. 2025 Aug 4;26(15):e202500237. doi: 10.1002/cphc.202500237. Epub 2025 Jun 19.

本文引用的文献

1
Stone-Wales Defect and Vacancy-Assisted Enhanced Atomic Orbital Interactions Between Graphene and Ambient Gases: A First-Principles Insight.斯通-威尔士缺陷与空位辅助增强的石墨烯与环境气体之间的原子轨道相互作用:第一性原理洞察
ACS Omega. 2020 Nov 25;5(48):31281-31288. doi: 10.1021/acsomega.0c04729. eCollection 2020 Dec 8.
2
Defect Engineering for Modulating the Trap States in 2D Photoconductors.用于调控二维光电导体中陷阱态的缺陷工程
Adv Mater. 2018 Aug 31:e1804332. doi: 10.1002/adma.201804332.
3
Interfacial engineering in graphene bandgap.
石墨烯能隙中的界面工程。
Chem Soc Rev. 2018 May 8;47(9):3059-3099. doi: 10.1039/c7cs00836h.
4
Atomic adsorption on graphene with a single vacancy: systematic DFT study through the periodic table of elements.具有单空位的石墨烯上的原子吸附:通过元素周期表进行的系统密度泛函理论研究
Phys Chem Chem Phys. 2018 Jan 3;20(2):858-865. doi: 10.1039/c7cp07542a.
5
Semiconducting Graphene from Highly Ordered Substrate Interactions.来自高度有序底物相互作用的半导体石墨烯。
Phys Rev Lett. 2015 Sep 25;115(13):136802. doi: 10.1103/PhysRevLett.115.136802. Epub 2015 Sep 21.
6
Understanding the origin of band gap formation in graphene on metals: graphene on Cu/Ir(111).理解金属上石墨烯中带隙形成的起源:铜/铱(111)上的石墨烯。
Sci Rep. 2014 Jul 16;4:5704. doi: 10.1038/srep05704.
7
Bandgap opening by patterning graphene.通过图案化石墨烯实现能隙打开。
Sci Rep. 2013;3:2289. doi: 10.1038/srep02289.
8
Graphene on metallic surfaces: problems and perspectives.金属表面上的石墨烯:问题与展望。
Phys Chem Chem Phys. 2012 Oct 21;14(39):13502-14. doi: 10.1039/c2cp42171b.
9
Interaction between graphene and the surface of SiO2.石墨烯与 SiO2 表面的相互作用。
J Phys Condens Matter. 2012 Aug 1;24(30):305004. doi: 10.1088/0953-8984/24/30/305004. Epub 2012 Jun 19.
10
Band gap opening of graphene by doping small boron nitride domains.通过掺杂小氮化硼畴实现石墨烯带隙的打开。
Nanoscale. 2012 Mar 21;4(6):2157-65. doi: 10.1039/c2nr11728b. Epub 2012 Feb 20.