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基于电化学沉积和 X 射线衍射技术的手性氨基酸识别。

Enantioselective recognition of amino acid based on electrochemical deposition and X-ray diffraction technology.

机构信息

College of Chemistry & Chemical Engineering, Yangzhou University, Yangzhou, China.

College of Materials Science and Engineering, Jilin University, Changchun City, Jilin Province, China.

出版信息

J Inorg Biochem. 2021 May;218:111398. doi: 10.1016/j.jinorgbio.2021.111398. Epub 2021 Feb 25.

Abstract

Addition of D-Asp in the electrochemical deposition process of Bismuth film resulted the generation of a new diffraction peak in X-ray diffraction (XRD) spectrum. This phenomenon was not observed in the situation of L-Asp. The new diffraction peak might suggest D-Asp could result in the generation of a specific Bismuth structure. Enantioselective recognition of D- and L-Asp can be realized based on this new XRD peak. The limit of detection was determined to be 3.5 × 10 and 1.7 × 10 mol L for D- and L-Asp, respectively. The XRD spectra of electrodeposited Copper films fabricated in the presence of D- or L-Asp showed different lattice plane diffraction peak intensity ratios. The reason was believed to be chirality induced different binding capabilities of Asp enantiomers that influenced Copper film growth. Therefore, the combination of electrochemical deposition using Copper as metal source and XRD technology can be used to achieve enantioselective recognition of Asp. The limit of detection for D- and L-Asp were determined to be 1.5 × 10 and 1.2 × 10 mol L, respectively.

摘要

在电化学沉积铋膜的过程中添加 D-天冬氨酸会导致 X 射线衍射(XRD)谱中出现一个新的衍射峰。在 L-天冬氨酸的情况下没有观察到这种现象。这个新的衍射峰可能表明 D-天冬氨酸可能导致了特定的铋结构的生成。基于这个新的 XRD 峰,可以实现 D-和 L-天冬氨酸的对映选择性识别。D-和 L-天冬氨酸的检测限分别确定为 3.5×10 和 1.7×10 mol L。在存在 D-或 L-天冬氨酸的情况下制备的电沉积铜膜的 XRD 光谱显示出不同的晶格平面衍射峰强度比。原因被认为是手性诱导的天冬氨酸对映体的不同结合能力影响了铜膜的生长。因此,将电化学沉积与 XRD 技术相结合,以铜作为金属源,可以实现天冬氨酸的对映选择性识别。D-和 L-天冬氨酸的检测限分别确定为 1.5×10 和 1.2×10 mol L。

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