Yang Chao, Chen Miaogen, Li Si, Zhang Xuanlin, Hua Chenqiang, Bai Hua, Xiao Chengcheng, Yang Shengyuan A, He Pimo, Xu Zhu-An, Lu Yunhao
School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China.
Key Laboratory of Intelligent Manufacturing Quality Big Data Tracing and Analysis of Zhejiang Province, Department of Physics, China Jiliang University, Hangzhou 310018, China.
ACS Appl Mater Interfaces. 2021 Mar 24;13(11):13517-13523. doi: 10.1021/acsami.0c20570. Epub 2021 Mar 9.
Ferroelectricity exists in a variety of three- and two-dimensional materials and is of great significance for the development of electronic devices. However, the presence of ferroelectricity in one-dimensional materials is extremely rare. Here, we predict ferroelectricity in one-dimensional SbN and BiN nanowires. Their polarization strengths are 1 order of magnitude higher than ever reported values in one-dimensional structures. Moreover, we find that spontaneous spin polarization can be generated in SbN and BiN nanowires by moderate hole doping. This is the first time the coexistence of both ferroelectricity and ferromagnetism in a one-dimensional system has been reported. Our finding not only broadens the family of one-dimensional ferroelectric materials but also offers a promising platform for novel electronic and spintronic applications.
铁电性存在于多种三维和二维材料中，对电子器件的发展具有重要意义。然而，一维材料中存在铁电性的情况极为罕见。在此，我们预测一维SbN和BiN纳米线中存在铁电性。它们的极化强度比一维结构中以往报道的值高1个数量级。此外，我们发现通过适度的空穴掺杂可以在SbN和BiN纳米线中产生自发自旋极化。这是首次报道一维系统中同时存在铁电性和铁磁性。我们的发现不仅拓宽了一维铁电材料家族，还为新型电子和自旋电子应用提供了一个有前景的平台。
