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过渡金属二硫族化合物单层中近自由电子态和铁磁性的电控制

Electric control of nearly free electron states and ferromagnetism in the transition-metal dichalcogenides monolayers.

作者信息

Li Min, Du Er-Wei, Liang Yun-Ye, Shen Yu-Hao, Chen Ju, Ju Weiwei, An Yipeng, Gong Shi-Jing

机构信息

Department of Electronics, East China Normal University, Shanghai 200241, People's Republic of China.

Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi, People's Republic of China.

出版信息

J Phys Condens Matter. 2021 Apr 27;33(20). doi: 10.1088/1361-648X/abed1c.

Abstract

Using the first-principles calculations, we explore the nearly free electron (NFE) states in the transition-metal dichalcogenides(= Mo, W;= S, Se, Te) monolayers. It is found that both the external electric field and electron (not hole) injection can flexibly tune the energy levels of the NFE states, which can shift down to the Fermi level and result in novel transport properties. In addition, we find that the valley polarization can be induced by both electron and hole doping in MoTemonolayer due to the ferromagnetism induced by the charge injection, which, however, is not observed in other five kinds ofmonolayers. We carefully check band structures of all themonolayers, and find that the exchange splitting in the top of the valence band and the bottom of conduction band plays the key role in the ferromagnetism. Our researches enrich the electronic, spintronic, and valleytronic properties ofmonolayers.

摘要

通过第一性原理计算,我们研究了过渡金属二硫属化物( = Mo,W; = S,Se,Te)单层中的近自由电子(NFE)态。研究发现,外部电场和电子(而非空穴)注入都可以灵活地调节NFE态的能级,使其能够下移至费米能级并导致新颖的输运特性。此外,我们发现由于电荷注入诱导的铁磁性,在MoTe单层中电子和空穴掺杂均可诱导谷极化,然而,在其他五种单层中未观察到这种现象。我们仔细检查了所有单层的能带结构,发现价带顶部和导带底部的交换分裂在铁磁性中起关键作用。我们的研究丰富了单层的电子、自旋电子和谷电子特性。

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