High-Detectivity Perovskite Photodetector Using Combustion-Processed NiO as -Type Buffer Layer.

We fabricated a photodetector device consisting of ITO/NiO/Perovskite/PCBM/BCP/Ag. The NiO layer was deposited using the sol-gel and combustion processes. Combustion-processed NiO films have advantages such as low annealing temperature, improved perovskite film quality, and better photodetector performance compared to the sol-gel processed NiO film. The improved film quality, improved charge transfer, and reduced dark current of the device using combustion-processed NiO film were investigated by measuring the current-voltage characteristics, transient photocurrent, and impedance analysis. The photodetector using the combustion-processed NiO achieved a high detectivity of 1.20×10 Jones and bandwidth of over 2 MHz at -0.1 V and 550 nm.