Zhang Yu-Xin, Wu Chien-Hung, Yeh Li-Wei, Chen Yi-Ming, Chang Kow-Ming, Chang Shih-Ho, Chin Albert
College of Electrical and Computing Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan, R.O.C.
Department of Electronics Engineering, Chung Hua University, Hsinchu 30012, Taiwan, R.O.C.
J Nanosci Nanotechnol. 2021 Sep 1;21(9):4763-4767. doi: 10.1166/jnn.2021.19257.
Transparent conductive oxide (TCO) semiconductors are attracted considerable attention due to a wide range of applications, such as flat panel display (FPD), touch panels, solar cells, and other optoelectronic devices. Owing to the different carrier conduction paths between -type and -type TCOs, the -type TCO used in TFTs usually have high / current ratio (>10) and high electron mobility (>10 cm²/V·s), -type TCO TFTs are both lower than that of -type one. For complementary circuits design and applications, however, both -type and -type semiconductor materials are equally important. For SnO thin films, it is important to adjust the ratio of Sn (SnO -type) and Sn (SnO₂ -type) in order to modulate the electrical characteristics. In this investigation of post treatment for SnO thin films, both microwave annealing (MWA) and furnace annealing process with 0₂ ambient are studied. The results show that SnO thin films are optimized at 300 °C, 30 minutes furnace annealing, the -type SnO/SnO₂ thin film shows surface mean roughness 0.168 nm, [Sn]/[Sn] ratio as 0.838, at least 80% transmittance between 380 nm-700 nm visible light. Withthe results, SnO can be even used to fabricate high performance -type thin film transistors (TFTs) device for future applications.
透明导电氧化物（TCO）半导体因其在平板显示器（FPD）、触摸屏、太阳能电池和其他光电器件等广泛应用中受到了相当大的关注。由于n型和p型TCO之间的载流子传导路径不同，用于薄膜晶体管（TFT）的n型TCO通常具有高Ion/loff电流比（>10）和高电子迁移率（>10 cm²/V·s），而p型TCO TFTs的这两个参数均低于n型。然而，对于互补电路设计和应用而言，n型和p型半导体材料同样重要。对于SnO薄膜，为了调节其电学特性，调整Sn（SnO n型）和Sn（SnO₂ p型）的比例很重要。在本次对SnO薄膜的后处理研究中，研究了微波退火（MWA）和在O₂环境下的炉退火工艺。结果表明，SnO薄膜在300℃炉退火30分钟时达到优化，p型SnO/SnO₂薄膜的表面平均粗糙度为0.168nm，[Sn]/[Sn]比例为0.838，在380nm - 700nm可见光范围内的透过率至少为80%。基于这些结果，SnO甚至可用于制造高性能的p型薄膜晶体管（TFT）器件以供未来应用。
