Stephen Gregory M, Hanbicki Aubrey T, Schumann Timo, Robinson Jeremy T, Goyal Manik, Stemmer Susanne, Friedman Adam L
Laboratory for Physical Sciences, 8050 Greenmead Drive, College Park, Maryland 20740, United States.
Materials Department, University of California, Santa Barbara, California 93106-5050, United States.
ACS Nano. 2021 Mar 23;15(3):5459-5466. doi: 10.1021/acsnano.1c00154. Epub 2021 Mar 11.
As the need for ever greater transistor density increases, the commensurate decrease in device size approaches the atomic limit, leading to increased energy loss and leakage currents, reducing energy efficiencies. Alternative state variables, such as electronic spin rather than electronic charge, have the potential to enable more energy-efficient and higher performance devices. These spintronic devices require materials capable of efficiently harnessing the electron spin. Here we show robust spin transport in CdAs films up to room temperature. We demonstrate a nonlocal spin valve switch from this material, as well as inverse spin Hall effect measurements yielding spin Hall angles as high as θ = 1.5 and spin diffusion lengths of 10-40 μm. Long spin-coherence lengths with efficient charge-to-spin conversion rates and coherent spin transport up to room temperature, as we show here in CdAs, are enabling steps toward realizing actual spintronic devices.
随着对更高晶体管密度的需求不断增加，器件尺寸相应减小并接近原子极限，导致能量损失和漏电流增加，从而降低了能量效率。诸如电子自旋而非电子电荷等替代状态变量，有可能实现更节能、高性能的器件。这些自旋电子器件需要能够有效利用电子自旋的材料。在此，我们展示了CdAs薄膜在室温下具有稳健的自旋输运。我们演示了基于这种材料的非局域自旋阀开关，以及逆自旋霍尔效应测量，得到的自旋霍尔角高达θ = 1.5，自旋扩散长度为10 - 40μm。正如我们在CdAs中所展示的，具有高效电荷到自旋转换率的长自旋相干长度以及高达室温的相干自旋输运，是迈向实现实际自旋电子器件的重要步骤。
