• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

分析二硫化钼薄膜的生长运动学和分形维数。

Analyzing growth kinematics and fractal dimensions of molybdenum disulfide films.

作者信息

Jiang Yan, Baben Moritz To, Lin Yuankun, Littler Chris, Syllaios A J, Neogi Arup, Philipose Usha

机构信息

Department of Physics, University of North Texas, Denton, TX 76203, United States of America.

GTT-Technologies, D-52134 Herzogenrath, Germany.

出版信息

Nanotechnology. 2021 Mar 25;32(24). doi: 10.1088/1361-6528/abedf0.

DOI:10.1088/1361-6528/abedf0
PMID:33706300
Abstract

Though the positive role of alkali halides in realizing large area growth of transition metal dichalcogenide layers has been validated, the film-growth kinematics has not yet been fully established. This work presents a systematic analysis of the MoSmorphology for films grown under various pre-treatment conditions of the substrate with sodium chloride (NaCl). At an optimum NaCl concentration, the domain size of the monolayer increased by almost two orders of magnitude compared to alkali-free growth of MoS. The results show an inverse relationship between fractal dimension and areal coverage of the substrate with monolayers and multi-layers, respectively. Using the Fact-Sage software, the role of NaCl in determining the partial pressures of Mo- and S-based compounds in gaseous phase at the growth temperature is elucidated. The presence of alkali salts is shown to affect the domain size and film morphology by affecting the Mo and S partial pressures. Compared to alkali-free synthesis under the same growth conditions, MoSfilm growth assisted by NaCl results in ≈81% of the substrate covered by monolayers. Under ideal growth conditions, at an optimum NaCl concentration, nucleation was suppressed, and domains enlarged, resulting in large area growth of MoSmonolayers. No evidence of alkali or halogen atoms were found in the composition analysis of the films. On the basis of Raman spectroscopy and photoluminescence measurements, the MoSfilms were found to be of good crystalline quality.

摘要

尽管碱金属卤化物在实现大面积生长过渡金属二硫属化物层方面的积极作用已得到验证,但薄膜生长动力学尚未完全确立。这项工作对在氯化钠(NaCl)对衬底进行各种预处理条件下生长的薄膜的钼硫形态进行了系统分析。在最佳NaCl浓度下,与无碱生长的MoS相比,单层的畴尺寸增加了近两个数量级。结果表明,分形维数与单层和多层衬底的面积覆盖率分别呈反比关系。使用Fact-Sage软件,阐明了NaCl在确定生长温度下气相中基于钼和硫的化合物的分压方面的作用。结果表明,碱金属盐的存在通过影响钼和硫的分压来影响畴尺寸和薄膜形态。与相同生长条件下的无碱合成相比,NaCl辅助的MoS薄膜生长导致约81%的衬底被单层覆盖。在理想生长条件下,在最佳NaCl浓度下,成核受到抑制,畴扩大,从而实现了MoS单层的大面积生长。在薄膜的成分分析中未发现碱或卤素原子的迹象。基于拉曼光谱和光致发光测量,发现MoS薄膜具有良好的晶体质量。

相似文献

1
Analyzing growth kinematics and fractal dimensions of molybdenum disulfide films.分析二硫化钼薄膜的生长运动学和分形维数。
Nanotechnology. 2021 Mar 25;32(24). doi: 10.1088/1361-6528/abedf0.
2
Considerations for Utilizing Sodium Chloride in Epitaxial Molybdenum Disulfide.考虑在二硫化钼外延中利用氯化钠。
ACS Appl Mater Interfaces. 2018 Nov 28;10(47):40831-40837. doi: 10.1021/acsami.8b16374. Epub 2018 Nov 14.
3
Suppressing Nucleation in Metal-Organic Chemical Vapor Deposition of MoS Monolayers by Alkali Metal Halides.碱金属卤化物抑制 MoS 单层的金属有机化学气相沉积成核。
Nano Lett. 2017 Aug 9;17(8):5056-5063. doi: 10.1021/acs.nanolett.7b02311. Epub 2017 Jul 18.
4
Application-Oriented Growth of a Molybdenum Disulfide (MoS) Single Layer by Means of Parametrically Optimized Chemical Vapor Deposition.通过参数优化化学气相沉积法实现面向应用的二硫化钼(MoS)单层生长
Materials (Basel). 2020 Jun 20;13(12):2786. doi: 10.3390/ma13122786.
5
Defect Passivation and Photoluminescence Enhancement of Monolayer MoS Crystals through Sodium Halide-Assisted Chemical Vapor Deposition Growth.通过卤化钠辅助化学气相沉积生长实现单层MoS晶体的缺陷钝化和光致发光增强
ACS Appl Mater Interfaces. 2020 Feb 26;12(8):9563-9571. doi: 10.1021/acsami.9b19224. Epub 2020 Feb 13.
6
High-Crystalline Monolayer Transition Metal Dichalcogenides Films for Wafer-Scale Electronics.用于晶圆级电子学的高结晶度单层过渡金属二硫属化物薄膜
ACS Nano. 2021 Feb 23;15(2):3038-3046. doi: 10.1021/acsnano.0c09430. Epub 2021 Jan 29.
7
Gas-Phase Alkali Metal-Assisted MOCVD Growth of 2D Transition Metal Dichalcogenides for Large-Scale Precise Nucleation Control.用于大规模精确成核控制的二维过渡金属二硫属化物的气相碱金属辅助金属有机化学气相沉积生长
Small. 2022 May;18(20):e2106368. doi: 10.1002/smll.202106368. Epub 2022 Apr 21.
8
Uniform Vapor-Pressure-Based Chemical Vapor Deposition Growth of MoS Using MoO Thin Film as a Precursor for Coevaporation.以MoO薄膜为共蒸发前驱体,基于均匀蒸气压的化学气相沉积法生长MoS
ACS Omega. 2018 Dec 31;3(12):18943-18949. doi: 10.1021/acsomega.8b02978.
9
Catalytic chemical vapor deposition of large-area uniform two-dimensional molybdenum disulfide using sodium chloride.使用氯化钠催化化学气相沉积大面积均匀的二维二硫化钼。
Nanotechnology. 2017 Nov 17;28(46):465103. doi: 10.1088/1361-6528/aa8f15. Epub 2017 Oct 23.
10
Layer-Controlled Chemical Vapor Deposition Growth of MoS2 Vertical Heterostructures via van der Waals Epitaxy.通过范德华外延法控制层状 MoS2 垂直异质结构的化学气相沉积生长。
ACS Nano. 2016 Jul 26;10(7):7039-46. doi: 10.1021/acsnano.6b03112. Epub 2016 Jul 7.