Kim Tae Soo, Dhakal Krishna P, Park Eunpyo, Noh Gichang, Chai Hyun-Jun, Kim Youngbum, Oh Saeyoung, Kang Minsoo, Park Jeongwon, Kim Jaewoo, Kim Suhyun, Jeong Hu Young, Bang Sunghwan, Kwak Joon Young, Kim Jeongyong, Kang Kibum
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea.
Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea.
Small. 2022 May;18(20):e2106368. doi: 10.1002/smll.202106368. Epub 2022 Apr 21.
Advances in large-area and high-quality 2D transition metal dichalcogenides (TMDCs) growth are essential for semiconductor applications. Here, the gas-phase alkali metal-assisted metal-organic chemical vapor deposition (GAA-MOCVD) of 2D TMDCs is reported. It is determined that sodium propionate (SP) is an ideal gas-phase alkali-metal additive for nucleation control in the MOCVD of 2D TMDCs. The grain size of MoS in the GAA-MOCVD process is larger than that in the conventional MOCVD process. This method can be applied to the growth of various TMDCs (MoS , MoSe , WSe , and WSe ) and the generation of large-scale continuous films. Furthermore, the growth behaviors of MoS under different SP and oxygen injection time conditions are systematically investigated to determine the effects of SP and oxygen on nucleation control in the GAA-MOCVD process. It is found that the combination of SP and oxygen increases the grain size and nucleation suppression of MoS . Thus, the GAA-MOCVD with a precise and controllable supply of a gas-phase alkali metal and oxygen allows achievement of optimum growth conditions that maximizes the grain size of MoS . It is expected that GAA-MOCVD can provide a way for batch fabrication of large-scale atomically thin electronic devices based on 2D semiconductors.
大面积高质量二维过渡金属二硫属化物（TMDCs）生长方面的进展对于半导体应用至关重要。在此，报道了二维TMDCs的气相碱金属辅助金属有机化学气相沉积（GAA-MOCVD）。已确定丙酸钠（SP）是二维TMDCs的MOCVD中用于成核控制的理想气相碱金属添加剂。GAA-MOCVD工艺中MoS的晶粒尺寸大于传统MOCVD工艺中的晶粒尺寸。该方法可应用于各种TMDCs（MoS、MoSe、WSe和WSe）的生长以及大规模连续薄膜的生成。此外，系统研究了不同SP和氧气注入时间条件下MoS的生长行为，以确定SP和氧气对GAA-MOCVD工艺中成核控制的影响。发现SP和氧气的组合增加了MoS的晶粒尺寸并抑制了成核。因此，精确可控地供应气相碱金属和氧气的GAA-MOCVD能够实现使MoS晶粒尺寸最大化的最佳生长条件。预计GAA-MOCVD可为基于二维半导体的大规模原子级薄电子器件的批量制造提供一条途径。
