Wang Yu, Tan Peng, Meng Xiangda, Zhou Zhongxiang, Huang Xiaolin, Hu Chengpeng, Huang Fei, Wang Jing, Tian Hao
School of Physics, Harbin Institute of Technology, Harbin 150001, People's Republic of China.
Key Laboratory of Micro-Nano Optoelectronic Information System, Ministry of Industry and Information Technology, Harbin 150001, People's Republic of China.
IUCrJ. 2021 Feb 24;8(Pt 2):319-326. doi: 10.1107/S2052252521000890. eCollection 2021 Mar 1.
Ion doping, an effective way to modify the nature of materials, is beneficial for the improvement of material properties. Mn doping exhibits gain of piezoelectric properties in KTa Nb O (KTN). However, the impact mechanism of Mn ions on properties remains unclear. Here, the effects of Mn doping on local heterogeneity and piezoelectric properties in KTN are studied. The electric field-induced strain of Mn-doped KTN is ∼0.25% at 10 kV cm, 118% higher than that of pristine KTN. Meanwhile, as a result of Mn doping, the dielectric permittivity was tripled and the ferroelectricity was modified. The changes in A(2TO), B + E(3TO) and E(4TO) vibrations characterized by Raman spectra indicate increased local polarization, weak correlation of dipoles and distorted lattices in Mn-doped KTN, respectively. First-principles calculations demonstrate stronger local heterogeneity introduced by Mn dopants, which weakens the dipole correlations and reduces domain sizes. As a result, the decreased domain sizes, combined with the larger ratio of lattice parameters and of the Mn-contained portion, are responsible for the higher piezoelectricity. This work reveals the impact on properties of KTN from Mn dopants and the prominent role of local heterogeneity in improving piezoelectricity, being valuable for the optimization and design of material properties.
离子掺杂作为一种改变材料性质的有效方法,有助于改善材料性能。在铌酸钾钠(KTN)中,锰(Mn)掺杂表现出压电性能的增强。然而,Mn离子对性能的影响机制仍不清楚。在此,研究了Mn掺杂对KTN中局部不均匀性和压电性能的影响。在10 kV/cm的电场下,Mn掺杂的KTN的电场诱导应变约为0.25%,比原始KTN高118%。同时,由于Mn掺杂,介电常数增加了两倍,铁电性也发生了改变。拉曼光谱表征的A(2TO)、B + E(3TO)和E(4TO)振动的变化分别表明,Mn掺杂的KTN中局部极化增加、偶极子相关性减弱和晶格畸变。第一性原理计算表明,Mn掺杂剂引入了更强的局部不均匀性,削弱了偶极子相关性并减小了畴尺寸。因此,畴尺寸的减小,加上含Mn部分晶格参数a和c的较大比值,是产生更高压电性的原因。这项工作揭示了Mn掺杂剂对KTN性能的影响以及局部不均匀性在提高压电性方面的重要作用,对材料性能的优化和设计具有重要价值。