Tan Peng, Huang Xiaolin, Wang Yu, Xing Bohan, Zhang Jiajie, Hu Chengpeng, Meng Xiangda, Xu Xiaodong, Li Danyang, Wang Xianjie, Zhou Xin, Zhang Nan, Wang Qisheng, Li Fei, Zhang Shujun, Tian Hao
School of Physics, Harbin Institute of Technology, Harbin, China.
Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, China.
Nat Commun. 2024 Dec 5;15(1):10619. doi: 10.1038/s41467-024-54842-6.
Piezoelectricity, a fundamental property of perovskite ferroelectrics, endows the materials at the heart of electromechanical systems spanning from macro to micro/nano scales. Defect engineering strategies, particularly involving heterovalent trace impurities and derived vacancies, hold great potential for adjusting piezoelectric performance. Despite the prevalent use of defect engineering for modification, a comprehensive understanding of the specific features that positively impact material properties is still lacking, this knowledge gap impedes the advancement of a universally applicable defect selection and design strategy. In this work, we select perovskite KTaNbO single crystals with orthorhombic phase as the matrix and introduce Fe and Mn elements, which are commonly used in "hard" ferroelectrics as dopants. We investigate how transition-metal doping modifies piezoelectric properties from the perspective of intrinsic polarization behaviors. Interestingly, despite both being doped into the B-site as an acceptor, Mn doping enhances the local structural heterogeneity, greatly bolstering the piezoelectric coefficient beyond 1000 pC/N, whereas Fe doping tends to stabilize the polarization, leading to a substantial improvement in the mechanical quality factor up to 700. This work deciphers the diverse impacts of transition metal impurities on regulating polarization structures and modifying piezoelectric properties, providing a good paradigm for strategically designing perovskite ferroelectrics.
压电性是钙钛矿铁电体的一种基本特性,赋予了从宏观到微纳尺度的机电系统核心材料该特性。缺陷工程策略,特别是涉及异价微量杂质和衍生空位的策略,在调节压电性能方面具有巨大潜力。尽管缺陷工程在改性方面得到了广泛应用,但仍缺乏对积极影响材料性能的具体特征的全面理解,这一知识差距阻碍了通用缺陷选择和设计策略的发展。在这项工作中,我们选择正交相的钙钛矿KTaNbO单晶作为基体,并引入铁和锰元素,这两种元素在“硬”铁电体中常用作掺杂剂。我们从本征极化行为的角度研究过渡金属掺杂如何改变压电性能。有趣的是,尽管两者都作为受主掺杂到B位,但锰掺杂增强了局部结构不均匀性,极大地提高了压电系数,超过1000 pC/N,而铁掺杂倾向于稳定极化,导致机械品质因数大幅提高,高达700。这项工作揭示了过渡金属杂质对调节极化结构和改变压电性能的不同影响,为钙钛矿铁电体的策略性设计提供了一个很好的范例。