Ki Ra-Seong, Seo Kwang-Seok, Cha Ho-Young
Department of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-744, Korea.
Department of Electronic and Electrical Engineering, Hongik University, Seoul, Korea.
J Nanosci Nanotechnol. 2021 Aug 1;21(8):4434-4437. doi: 10.1166/jnn.2021.19414.
Heat dissipation properties are very important in AlGaN/GaN RF devices operating at high frequency and high power. Therefore, in order to extract the thermal conductivity of the substrate and device, which are essential for the analysis of the heat dissipation characteristics, various methods of extraction were attempted. And this experiments were conducted in parallel with micro-raman measurement and thermal simulation. As a result, it was possible to extract the thermal conductivity of each GaN-on-diamond epi layer by matching the thermal simulation data and the shift of the micro-raman peak according to various operating states and temperatures of the pattern. In particular, we tried to extract the of the interface layer (SiN) for adhesion between GaN and diamond, which greatly affects the thermal conductivity of the device, and successfully extracted the following thermal conductivity value of = 3.162·(/300) (W/mK) from GaN and diamond interface layer.
散热特性在高频和高功率运行的AlGaN/GaN射频器件中非常重要。因此，为了提取对于散热特性分析至关重要的衬底和器件的热导率，尝试了各种提取方法。并且这些实验与微拉曼测量和热模拟并行进行。结果，通过根据图案的各种工作状态和温度匹配热模拟数据和微拉曼峰的位移，可以提取每个金刚石上氮化镓外延层的热导率。特别是，我们试图提取对器件热导率有很大影响的氮化镓与金刚石之间用于粘附的界面层（SiN）的热导率，并成功从氮化镓和金刚石界面层提取了以下热导率值κ = 3.162·（/300）（W/mK）。
