粒径对使用氧化锌纳米颗粒的量子点发光器件电荷平衡特性的影响

The Effect of Particle Size on the Charge Balance Property of Quantum Dot Light-Emitting Devices Using Zinc Oxide Nanoparticles.

作者信息

Ha Mi-Young, Kim Chang Kyo, Moon Dae-Gyu

机构信息

Display New Technology Institute, Soonchunhyang University Asan, Chungnam 31538, Republic of Korea.

Department of Materials Engineering, Soonchunhyang University, Asan, Chungnam 31538, Republic of Korea.

出版信息

J Nanosci Nanotechnol. 2021 Jul 1;21(7):3795-3799. doi: 10.1166/jnn.2021.19233.

DOI:10.1166/jnn.2021.19233

PMID:33715694

Abstract

Zinc oxide nanoparticles (ZnO NPs) have been widely used as an inorganic electron transport layer (ETL) in quantum dot light-emitting devices (QLEDs) due to their excellent electrical properties. Here, we report the effect of ZnO NPs inorganic ETL of different particle sizes on the electrical and optical properties of QLEDs. We synthesized ZnO NPs into the size of 3 nm and 8 nm respectively and used them as an inorganic ETL of QLEDs. The particle size and crystal structure of the synthesized ZnO NPs were verified by Transmission electron microscopy (TEM) analysis and X-ray pattern analysis. The device with 8 nm ZnO NPs ETL exhibited higher efficiency than the 3 nm ZnO NPs ETL device in the single hole transport layer (HTL) QLEDs. The maximum current efficiency of 19.0 cd/A was achieved in the device with 8 nm ZnO NPs layer. We obtained the maximum current efficiency of 17.5 cd/A in 3 nm ZnO NPs device by optimizing bilayer HTL and ZnO NPs ETL.

摘要

氧化锌纳米颗粒（ZnO NPs）因其优异的电学性能，已被广泛用作量子点发光器件（QLED）中的无机电子传输层（ETL）。在此，我们报告了不同粒径的ZnO NPs无机ETL对QLED电学和光学性能的影响。我们分别合成了粒径为3 nm和8 nm的ZnO NPs，并将它们用作QLED的无机ETL。通过透射电子显微镜（TEM）分析和X射线图谱分析对合成的ZnO NPs的粒径和晶体结构进行了验证。在单空穴传输层（HTL）QLED中，具有8 nm ZnO NPs ETL的器件表现出比具有3 nm ZnO NPs ETL的器件更高的效率。在具有8 nm ZnO NPs层的器件中实现了19.0 cd/A的最大电流效率。通过优化双层HTL和ZnO NPs ETL，我们在3 nm ZnO NPs器件中获得了17.5 cd/A的最大电流效率。