Lee Gyujeong, Park Hea-Lim, Lee Sin-Hyung, Kim Min-Hoi, Lee Sin-Doo
School of Electrical Engineering, 1 Gwanak-ro, Gwanak-gu, Seoul National University, Seoul 08826, Republic of Korea.
School of Electronics Engineering, and School of Electrical Engineering, Kyungpook National University, Bukgu, Daegu 702-701, Republic of Korea.
J Nanosci Nanotechnol. 2021 Jul 1;21(7):3923-3928. doi: 10.1166/jnn.2021.19242.
We investigate the effect of a semiconducting organic buffer layer (SOBL) on the injection and transport of charges in organic field-effect transistors (OFETs). Here, two different injection barriers at the source/organic semiconductor interface are respectively studied with the aid of a numerical simulation: one is intermediate (0.4 eV), and the other is large energy barriers (0.6 eV). The introduction of nanostructure buffer layer, or SOBL, exhibits the decrease of potential loss at the contact interfaces, improving the electrical performance of the OFETs. It is also found that the energy level as well as the mobility of the SOBL plays an important role in determining the injection properties at the metal/organic hetero-interfaces and thus improving the device performance. Our systematic investigation on the injection barrier by the introduction of the nanostructure buffer layer will provide a useful guideline for the fabrication of high-performance FETs with molecular semiconductors.
我们研究了半导体有机缓冲层（SOBL）对有机场效应晶体管（OFET）中电荷注入和传输的影响。在此，借助数值模拟分别研究了源极/有机半导体界面处的两种不同注入势垒：一种是中等（0.4电子伏特），另一种是大的能垒（0.6电子伏特）。纳米结构缓冲层或SOBL的引入显示出接触界面处电位损失的降低，改善了OFET的电学性能。还发现SOBL的能级以及迁移率在确定金属/有机异质界面处的注入特性从而改善器件性能方面起着重要作用。我们通过引入纳米结构缓冲层对注入势垒进行的系统研究将为制造具有分子半导体的高性能场效应晶体管提供有用的指导。
