Jo Hyunwoo, Lee Wonwoo, Jung Hyunseung, Park Dong Mok, Lee Hojin, Kang Moon Sung
Department of Chemical and Biomolecular Engineering, Sogang University, Seoul 04107, Republic of Korea.
School of Electrical Engineering, Soongsil University, Seoul 06987, Republic of Korea.
ACS Appl Mater Interfaces. 2021 Mar 24;13(11):13541-13547. doi: 10.1021/acsami.0c21663. Epub 2021 Mar 10.
Exploiting the long-range polarizability of an electrolyte based on ion migration, electric double-layer transistors (EDLTs) can be constructed in an unconventional configuration; here, the gate electrode is placed coplanarly with the device channel. In this paper, we demonstrate the influence of the distance factors of the electrolyte layer on the operation of EDLTs with a coplanar gate. As the promptness of the electric double-layer formation depends on the distance between the channel and the gate, the dynamic characteristics of a remote-gated transistor degrade with long distances. To suppress this degradation, we suggest using multiple coplanar floating gates bridged through ionic dielectric layers. Unlike remotely gated EDLTs that utilize a single extended electrolyte layer, the devices with multiple segmented electrolyte layers operate effectively even when they are gated from a distance longer than 1 mm.
基于离子迁移利用电解质的长程极化率，可采用非常规配置构建电双层晶体管（EDLT）；在此配置中，栅电极与器件沟道共面放置。在本文中，我们展示了电解质层距离因素对具有共面栅的EDLT工作的影响。由于电双层形成的迅速程度取决于沟道与栅之间的距离，远程栅控晶体管的动态特性会随着距离增加而退化。为抑制这种退化，我们建议使用通过离子介电层桥接的多个共面浮栅。与利用单个扩展电解质层的远程栅控EDLT不同，具有多个分段电解质层的器件即使在距离超过1毫米的情况下被栅控时也能有效工作。
