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在H桥结构中并联绝缘栅双极型晶体管以降低电流应力。

Paralleling insulated-gate bipolar transistors in the H-bridge structure to reduce current stress.

作者信息

Memarian Sorkhabi Majid, Wendt Karen, Rogers Daniel, Denison Timothy

机构信息

MRC Brain Network Dynamics Unit, University of Oxford, Oxford, OX1 3TH UK.

Department of Engineering Science, University of Oxford, Oxford, OX1 3PJ UK.

出版信息

SN Appl Sci. 2021;3(4):406. doi: 10.1007/s42452-021-04420-y. Epub 2021 Mar 2.

DOI:10.1007/s42452-021-04420-y
PMID:33748674
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7925468/
Abstract

UNLABELLED

In this study we present the new power electronic circuit implementation to create the arbitrary near-rectangular electromagnetic pulse. To this end, we develop a parallel- Insulated-gate bipolar transistors (IGBT)-based magnetic pulse generator utilizing the H-bridge architecture. This approach effectively reduces the current stress on the power switches while maintaining a simple structure using a single DC source and energy storage capacitor. Experimental results from the circuit characterization show that the proposed circuit is capable of repeatedly generating near-rectangular magnetic pulses and enables the generation of configurable and stable magnetic pulses without causing excessive device stresses. The introduced device enables the production of near-rectangular pulse trains for modulated magnetic stimuli. The maximum positive pulse width in the proposed neurostimulator is up to 600 µs, which is adjustable by the operator at the step resolution of 10 µs. The maximum transferred energy to the treatment coil was measured to be 100.4 J. The proposed transcranial magnetic stimulator (TMS) device enables more flexible magnetic stimulus shaping by H-bridge architecture and parallel IGBTs, which can effectively mitigate the current stress on power switches for repetitive treatment protocols.

SUPPLEMENTARY INFORMATION

The online version contains supplementary material available at 10.1007/s42452-021-04420-y.

摘要

未标注

在本研究中,我们展示了一种新的电力电子电路实现方式,用于产生任意近矩形电磁脉冲。为此,我们开发了一种基于并联绝缘栅双极型晶体管(IGBT)的磁脉冲发生器,采用H桥架构。这种方法在使用单个直流电源和储能电容器保持简单结构的同时,有效降低了功率开关上的电流应力。电路特性的实验结果表明,所提出的电路能够重复产生近矩形磁脉冲,并能够产生可配置且稳定的磁脉冲,而不会导致过大的器件应力。所引入的器件能够产生用于调制磁刺激的近矩形脉冲序列。所提出的神经刺激器中的最大正脉冲宽度可达600微秒,操作员可在10微秒的步长分辨率下进行调节。测量到传输到治疗线圈的最大能量为100.4焦耳。所提出的经颅磁刺激(TMS)装置通过H桥架构和并联IGBT实现了更灵活的磁刺激整形,这可以有效减轻重复治疗方案中功率开关上的电流应力。

补充信息

在线版本包含可在10.1007/s42452-021-04420-y获取的补充材料。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/abd5/7925468/ebcbac263329/42452_2021_4420_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/abd5/7925468/b9034ee3302f/42452_2021_4420_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/abd5/7925468/0d2ea7423fef/42452_2021_4420_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/abd5/7925468/d4124bdbaca7/42452_2021_4420_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/abd5/7925468/5afde1c3d7ad/42452_2021_4420_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/abd5/7925468/262cfa1d0c78/42452_2021_4420_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/abd5/7925468/ebcbac263329/42452_2021_4420_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/abd5/7925468/b9034ee3302f/42452_2021_4420_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/abd5/7925468/0d2ea7423fef/42452_2021_4420_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/abd5/7925468/d4124bdbaca7/42452_2021_4420_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/abd5/7925468/5afde1c3d7ad/42452_2021_4420_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/abd5/7925468/262cfa1d0c78/42452_2021_4420_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/abd5/7925468/ebcbac263329/42452_2021_4420_Fig6_HTML.jpg

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Non-invasive neuromodulation using rTMS and the electromagnetic-perceptive gene (EPG) facilitates plasticity after nerve injury.
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