Kim Youngjun, Woo Whang Je, Kim Donghyun, Lee Sangyoon, Chung Seung-Min, Park Jusang, Kim Hyungjun
School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-Ro, Seodaemun-Gu, Seoul, 03722, Republic of Korea.
Adv Mater. 2021 Nov;33(47):e2005907. doi: 10.1002/adma.202005907. Epub 2021 Mar 21.
Transition metal chalcogenides (TMCs) are a large family of 2D materials with different properties, and are promising candidates for a wide range of applications such as nanoelectronics, sensors, energy conversion, and energy storage. In the research of new materials, the development and investigation of industry-compatible synthesis techniques is of key importance. In this respect, it is important to study 2D TMC materials synthesized by the atomic layer deposition (ALD) technique, which is widely applied in industries. In addition to the synthesis of 2D TMCs, ALD is used to modulate the characteristic of 2D TMCs such as their carrier density and morphology. So far, the improvement of thin film uniformity without oxidation and the synthesis of low-dimensional nanomaterials on 2D TMCs have been the research focus. Herein, the synthesis and modulation of 2D TMCs by ALD is described, and the characteristics of ALD-based TMCs used in nanoelectronics, sensors, and energy applications are discussed.
过渡金属硫族化合物(TMCs)是一大类具有不同特性的二维材料,是纳米电子学、传感器、能量转换和能量存储等广泛应用的有前途的候选材料。在新材料研究中,开发和研究与工业兼容的合成技术至关重要。在这方面,研究通过原子层沉积(ALD)技术合成的二维TMC材料很重要,该技术在工业中广泛应用。除了合成二维TMCs,ALD还用于调节二维TMCs的特性,如它们的载流子密度和形态。到目前为止,在不发生氧化的情况下提高薄膜均匀性以及在二维TMCs上合成低维纳米材料一直是研究重点。本文描述了通过ALD对二维TMCs的合成和调制,并讨论了用于纳米电子学、传感器和能量应用的基于ALD的TMCs的特性。