• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

用于量化神经形态系统的TiO/AlO忆阻器交叉阵列中具有精确编程方案的3位多级操作。

3-bit multilevel operation with accurate programming scheme in TiO/AlOmemristor crossbar array for quantized neuromorphic system.

作者信息

Kim Tae-Hyeon, Lee Jaewoong, Kim Sungjoon, Park Jinwoo, Park Byung-Gook, Kim Hyungjin

机构信息

Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul 08826, Republic of Korea.

Department of Electronic Engineering, Inha University, Incheon 22212, Republic of Korea.

出版信息

Nanotechnology. 2021 Apr 30;32(29). doi: 10.1088/1361-6528/abf0cc.

DOI:10.1088/1361-6528/abf0cc
PMID:33752189
Abstract

As interest in artificial intelligence (AI) and relevant hardware technologies has been developed rapidly, algorithms and network structures have become significantly complicated, causing serious power consumption issues because an enormous amount of computation is required. Neuromorphic computing, a hardware AI technology with memory devices, has emerged to solve this problem. For this application, multilevel operations of synaptic devices are important to imitate floating point weight values in software AI technologies. Furthermore, weight transfer methods to desired weight targets must be arranged for off-chip training. From this point of view, we fabricate 32 × 32 memristor crossbar array and verify the 3-bit multilevel operations. The programming accuracy is verified for 3-bit quantized levels by applying a reset-voltage-control programming scheme to the fabricated TiO/AlO-based memristor array. After that, a synapse composed of two differential memristors and a fully-connected neural network for modified national institute of standards and technology (MNIST) pattern recognition are constructed. The trained weights are post-training quantized in consideration of the 3-bit characteristics of the memristor. Finally, the effect of programming error on classification accuracy is verified based on the measured data, and we obtained 98.12% classification accuracy for MNIST data with the programming accuracy of 1.79% root-mean-square-error. These results imply that the proposed reset-voltage-control programming scheme can be utilized for a precise tuning, and expected to contribute for the development of a neuromorphic system capable of highly precise weight transfer.

摘要

随着对人工智能(AI)及相关硬件技术的兴趣迅速发展,算法和网络结构变得极为复杂,由于需要大量计算,导致了严重的功耗问题。神经形态计算作为一种带有存储器件的硬件AI技术应运而生,旨在解决这一问题。对于此应用,突触器件的多级操作对于模仿软件AI技术中的浮点权重值很重要。此外,必须安排向期望权重目标的权重转移方法用于片外训练。从这一角度出发,我们制造了32×32的忆阻器交叉阵列并验证了3位多级操作。通过对制造的基于TiO/AlO的忆阻器阵列应用复位电压控制编程方案,验证了3位量化级别的编程精度。之后,构建了由两个差分忆阻器组成的突触以及用于改进的美国国家标准与技术研究院(MNIST)模式识别的全连接神经网络。考虑到忆阻器的3位特性,对训练后的权重进行了训练后量化。最后,基于测量数据验证了编程误差对分类精度的影响,对于MNIST数据,我们在编程精度为均方根误差1.79%的情况下获得了98.12%的分类精度。这些结果表明,所提出的复位电压控制编程方案可用于精确调谐,并有望为能够进行高精度权重转移的神经形态系统的发展做出贡献。

相似文献

1
3-bit multilevel operation with accurate programming scheme in TiO/AlOmemristor crossbar array for quantized neuromorphic system.用于量化神经形态系统的TiO/AlO忆阻器交叉阵列中具有精确编程方案的3位多级操作。
Nanotechnology. 2021 Apr 30;32(29). doi: 10.1088/1361-6528/abf0cc.
2
Intrinsic variation effect in memristive neural network with weight quantization.具有权重量化的忆阻神经网络中的内在变化效应
Nanotechnology. 2022 Jun 24;33(37). doi: 10.1088/1361-6528/ac7651.
3
A Learning-Rate Modulable and Reliable TiO Memristor Array for Robust, Fast, and Accurate Neuromorphic Computing.用于稳健、快速和准确神经形态计算的学习率可调且可靠的 TiO 忆阻器阵列。
Adv Sci (Weinh). 2022 Aug;9(22):e2201117. doi: 10.1002/advs.202201117. Epub 2022 Jun 5.
4
Implementation of Convolutional Neural Networks in Memristor Crossbar Arrays with Binary Activation and Weight Quantization.具有二值激活和权重量化的忆阻器交叉阵列中卷积神经网络的实现
ACS Appl Mater Interfaces. 2024 Jan 10;16(1):1054-1065. doi: 10.1021/acsami.3c13775. Epub 2024 Jan 1.
5
Quantized Convolutional Neural Network Implementation on a Parallel-Connected Memristor Crossbar Array for Edge AI Platforms.基于并联连接的忆阻器交叉阵列的量子卷积神经网络在边缘 AI 平台上的实现。
J Nanosci Nanotechnol. 2021 Mar 1;21(3):1854-1861. doi: 10.1166/jnn.2021.18925.
6
A Parasitic Resistance-Adapted Programming Scheme for Memristor Crossbar-Based Neuromorphic Computing Systems.一种用于基于忆阻器交叉阵列的神经形态计算系统的寄生电阻自适应编程方案。
Materials (Basel). 2019 Dec 8;12(24):4097. doi: 10.3390/ma12244097.
7
Milk-TaO Hybrid Memristors with Crossbar Array Structure for Bio-Organic Neuromorphic Chip Applications.用于生物有机神经形态芯片应用的具有交叉阵列结构的乳陶混合忆阻器
Nanomaterials (Basel). 2022 Aug 28;12(17):2978. doi: 10.3390/nano12172978.
8
RRAM-based synapse devices for neuromorphic systems.基于 RRAM 的用于神经形态系统的突触器件。
Faraday Discuss. 2019 Feb 18;213(0):421-451. doi: 10.1039/c8fd00127h.
9
Thousands of conductance levels in memristors integrated on CMOS.在 CMOS 上集成的数千个电导水平的忆阻器。
Nature. 2023 Mar;615(7954):823-829. doi: 10.1038/s41586-023-05759-5. Epub 2023 Mar 29.
10
Effect of Initial Synaptic State on Pattern Classification Accuracy of 3D Vertical Resistive Random Access Memory (VRRAM) Synapses.初始突触状态对 3D 垂直电阻式随机存取存储器 (VRRAM) 突触模式分类准确性的影响。
J Nanosci Nanotechnol. 2020 Aug 1;20(8):4730-4734. doi: 10.1166/jnn.2020.17798.

引用本文的文献

1
Impact of Reset Pulse Width on Gradual Conductance Programming in AlO/TiO-Based RRAM.复位脉冲宽度对基于AlO/TiO的阻变随机存取存储器中渐变电导编程的影响。
Micromachines (Basel). 2025 Jun 17;16(6):718. doi: 10.3390/mi16060718.