Yang Kun, Chen Yanning, Wang Shulong, Han Tao, Liu Hongxia
Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi'an 710071, People's Republic of China.
State Grid Key Laboratory of Power Industrial Chip Design and Analysis Technology, Beijing Smart-Chip Microelectronics Technology Co., Ltd, People's Republic of China.
Nanotechnology. 2021 May 4;32(30). doi: 10.1088/1361-6528/abf2fd.
The charge trapping effect plays a key role in multi-bit memory devices and brain-like neuron devices. Herein, MoSfield effect transistors are fabricated, incorporating Al into host LaOas the gate dielectric, which exhibit excellent electrical properties with an on-off ratio in the memory window of ∼10and a memory window ratio of ∼40%. Furthermore, the charge trapping and de-trapping processes were systematically studied, and the time constants are obtained from time-domain characteristics. Making use of the charge trapping effect, the threshold voltage of the device can be continuously adjusted. The oxide layer trap density and the interface state trap density are extracted using the charge separation method. These theoretical studies provide a deeper understanding of ways to control the charge trapping process, benefitting the commercialization of two-dimensional electronic devices and the development of new charge trapping devices.
电荷俘获效应在多位存储器件和类脑神经元器件中起着关键作用。在此，制备了金属氧化物半导体场效应晶体管，将铝掺入主体氧化镧中作为栅极电介质，其在存储窗口中的开/关比约为10，存储窗口比约为40%，表现出优异的电学性能。此外，系统地研究了电荷俘获和去俘获过程，并从时域特性中获得了时间常数。利用电荷俘获效应，可以连续调节器件的阈值电压。采用电荷分离方法提取了氧化物层陷阱密度和界面态陷阱密度。这些理论研究为控制电荷俘获过程的方法提供了更深入的理解，有利于二维电子器件的商业化和新型电荷俘获器件的开发。
