†Institute of Chemistry, Academia Sinica, Taipei, Taiwan 11529.
‡Department of Chemistry, National Tsing-Hua University, Hsin-chu, Taiwan 30013.
ACS Appl Mater Interfaces. 2015 May 13;7(18):9767-75. doi: 10.1021/acsami.5b01625. Epub 2015 Apr 28.
A flexible, low-voltage, and nonvolatile memory device was fabricated by implanting a functional monolayer on an aluminum oxide dielectric surface in a pentacene-based organic transistor. The monolayer-forming molecule contains a phosphonic acid group as the anchoring moiety and a charge-trapping core group flanked between two alkyl chain spacers as the charge trapping site. The memory characteristics strongly depend on the monolayer used due to the localized charge-trapping capability for different core groups, including the diacetylenic (DA) unit as the hole carrier trap, the naphthalenetetracarboxyldiimide (ND) unit as the electron carrier trap, and the one with both DA and ND units present, respectively. The device with the monolayer carrying both DA and ND groups has a larger memory window than that for the one containing DA only and a longer retention time than that for the one containing DA or ND only, giving a memory window of 1.4 V and a retention time around 10(9) s. This device with hybrid organic monolayer/inorganic dielectrics also exhibited rather stable device characteristics upon bending of the polymeric substrate.
通过在基于五苯的有机晶体管的氧化铝电介质表面上植入功能单层，制造了一种灵活、低压和非易失性存储器件。形成单层的分子含有膦酸基团作为锚固部分和电荷俘获核基团，该核基团被两个烷基链间隔物夹在中间作为电荷俘获位点。由于不同核基团的局部电荷俘获能力，记忆特性强烈依赖于使用的单层，包括二乙炔基（DA）单元作为空穴载流子陷阱、萘四羧酸二酰亚胺（ND）单元作为电子载流子陷阱，以及同时包含 DA 和 ND 单元的一种。具有同时包含 DA 和 ND 基团的单层的器件具有比仅包含 DA 的器件更大的存储窗口，并且比仅包含 DA 或 ND 的器件具有更长的保持时间，其存储窗口为 1.4 V，保持时间约为 10(9) s。这种具有混合有机单层/无机电介质的器件在聚合物衬底弯曲时也表现出相当稳定的器件特性。
