Liu Qi, Yin Jun, Zhang Bin-Bin, Chen Jia-Kai, Zhou Yang, Zhang Lu-Min, Wang Lu-Ming, Zhao Qing, Hou Jingshan, Shu Jie, Song Bo, Shirahata Naoto, Bakr Osman M, Mohammed Omar F, Sun Hong-Tao
College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123, China.
Advanced Membranes and Porous Materials Center (AMPMC) & KAUST Catalysis Center (KCC), Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia.
J Am Chem Soc. 2021 Apr 14;143(14):5470-5480. doi: 10.1021/jacs.1c01049. Epub 2021 Apr 1.
The synthesis of highly luminescent colloidal CsSnX (X = halogen) perovskite nanocrystals (NCs) remains a long-standing challenge due to the lack of a fundamental understanding of how to rationally suppress the formation of structural defects that significantly influence the radiative carrier recombination processes. Here, we develop a theory-guided, general synthetic concept for highly luminescent CsSnX NCs. Guided by density functional theory calculations and molecular dynamics simulations, we predict that, although there is an opposing trend in the chemical potential-dependent formation energies of various defects, highly luminescent CsSnI NCs with narrow emission could be obtained through decreasing the density of tin vacancies. We then develop a colloidal synthesis strategy that allows for rational fine-tuning of the reactant ratio in a wide range but still leads to the formation of CsSnI NCs. By judiciously adopting a tin-rich reaction condition, we obtain narrow-band-emissive CsSnI NCs with a record emission quantum yield of 18.4%, which is over 50 times larger than those previously reported. Systematic surface-state characterizations reveal that these NCs possess a Cs/I-lean surface and are capped with a low density of organic ligands, making them an excellent candidate for optoelectronic devices without any postsynthesis ligand management. We showcase the generalizability of our concept by further demonstrating the synthesis of highly luminescent CsSnIBr and CsSnIBr NCs. Our findings not only highlight the value of computation in guiding the synthesis of high-quality colloidal perovskite NCs but also could stimulate intense efforts on tin-based perovskite NCs and accelerate their potential applications in a range of high-performance optoelectronic devices.
由于缺乏对如何合理抑制结构缺陷形成的基本理解,而这些结构缺陷会显著影响辐射载流子复合过程,因此高发光胶体CsSnX(X = 卤素)钙钛矿纳米晶体(NCs)的合成仍然是一个长期存在的挑战。在此,我们开发了一种理论指导的、用于高发光CsSnX NCs的通用合成概念。在密度泛函理论计算和分子动力学模拟的指导下,我们预测,尽管各种缺陷的化学势依赖形成能存在相反的趋势,但通过降低锡空位密度可以获得具有窄发射的高发光CsSnI NCs。然后,我们开发了一种胶体合成策略,该策略允许在很宽的范围内合理微调反应物比例,但仍能导致CsSnI NCs的形成。通过明智地采用富锡反应条件,我们获得了窄带发射的CsSnI NCs,其发射量子产率达到了创纪录的18.4%,比之前报道的高出50倍以上。系统的表面态表征表明,这些NCs具有贫Cs/I表面,并且被低密度的有机配体封端,这使得它们成为无需任何合成后配体管理的光电器件的优秀候选材料。我们通过进一步展示高发光CsSnIBr和CsSnIBr NCs的合成,证明了我们概念的通用性。我们的发现不仅突出了计算在指导高质量胶体钙钛矿NCs合成中的价值,还可能激发对锡基钙钛矿NCs的深入研究,并加速它们在一系列高性能光电器件中的潜在应用。