Kim Tae-Hyeon, Jang Won-Ho, Yim Jun-Hyeok, Cha Ho-Young
School of Electrical and Electronic Engineering, Hongik University, 94 Wausan-ro, Mapo-gu, Seoul 04066, Korea.
Micromachines (Basel). 2021 Mar 10;12(3):291. doi: 10.3390/mi12030291.
In this study, we proposed a rectifying drain electrode that was embedded in a p-GaN gate AlGaN/GaN heterojunction field-effect transistor to achieve the unidirectional switching characteristics, without the need for a separate reverse blocking device or an additional process step. The rectifying drain electrode was implemented while using an embedded p-GaN gating electrode that was placed in front of the ohmic drain electrode. The embedded p-GaN gating electrode and the ohmic drain electrode are electrically shorted to each other. The concept was validated by technology computer aided design (TCAD) simulation along with an equivalent circuit, and the proposed device was demonstrated experimentally. The fabricated device exhibited the unidirectional characteristics successfully, with a threshold voltage of ~2 V, a maximum current density of ~100 mA/mm, and a forward drain turn-on voltage of ~2 V.
在本研究中，我们提出了一种嵌入p-GaN栅极的AlGaN/GaN异质结场效应晶体管的整流漏极电极，以实现单向开关特性，而无需单独的反向阻断器件或额外的工艺步骤。整流漏极电极是在使用置于欧姆漏极电极前方的嵌入式p-GaN栅极电极时实现的。嵌入式p-GaN栅极电极和欧姆漏极电极彼此电气短路。该概念通过技术计算机辅助设计（TCAD）模拟以及等效电路得到验证，并通过实验对所提出的器件进行了演示。所制造的器件成功展示了单向特性，阈值电压约为2 V，最大电流密度约为100 mA/mm，正向漏极开启电压约为2 V。
