基于电解质-绝缘体-半导体（EIS）传感器的高灵敏度镁掺杂氧化锌纳米棒pH传感器

Highly Sensitive Magnesium-Doped ZnO Nanorod pH Sensors Based on Electrolyte-Insulator-Semiconductor (EIS) Sensors.

作者信息

Al-Khalqi Ensaf Mohammed, Abdul Hamid Muhammad Azmi, Al-Hardan Naif H, Keng Lim Kar

机构信息

Department of Applied Physics, Faculty of Science and Technology, Universiti Kebangsaan Malaysia (UKM), Bangi 43600, Selangor, Malaysia.

Physics Department, Faculty of Applied Science, Thamar University, Dhamar 87246, Yemen.

出版信息

Sensors (Basel). 2021 Mar 17;21(6):2110. doi: 10.3390/s21062110.

For highly sensitive pH sensing, an electrolyte insulator semiconductor (EIS) device, based on ZnO nanorod-sensing membrane layers doped with magnesium, was proposed. ZnO nanorod samples prepared via a hydrothermal process with different Mg molar ratios (0-5%) were characterized to explore the impact of magnesium content on the structural and optical characteristics and sensing performance by X-ray diffraction analysis (XRD), atomic force microscopy (AFM), and photoluminescence (PL). The results indicated that the ZnO nanorods doped with 3% Mg had a high hydrogen ion sensitivity (83.77 mV/pH), linearity (96.06%), hysteresis (3 mV), and drift (0.218 mV/h) due to the improved crystalline quality and the surface hydroxyl group role of ZnO. In addition, the detection characteristics varied with the doping concentration and were suitable for developing biomedical detection applications with different detection elements.

为实现高灵敏度pH传感，提出了一种基于掺杂镁的ZnO纳米棒传感膜层的电解质-绝缘体-半导体（EIS）器件。通过水热法制备了不同Mg摩尔比（0-5%）的ZnO纳米棒样品，并通过X射线衍射分析（XRD）、原子力显微镜（AFM）和光致发光（PL）对其进行表征，以探究镁含量对结构、光学特性及传感性能的影响。结果表明，由于ZnO晶体质量的改善和表面羟基的作用，掺杂3%Mg的ZnO纳米棒具有高氢离子灵敏度（83.77 mV/pH）、线性度（96.06%）、滞后现象（3 mV）和漂移（0.218 mV/h）。此外，检测特性随掺杂浓度而变化，适用于开发具有不同检测元件的生物医学检测应用。