Polyakov Oleg, Amelichev Vladimir, Zhukov Dmitry, Vasilyev Dmitry, Kasatkin Sergey, Polyakov Peter, Kostyuk Dmitry
Faculty of Physics, Lomonosov Moscow State University, 119991 Moscow, Russia.
Scientific-Manufacturing Complex "Technological Centre", 124498 Moscow, Russia.
Sensors (Basel). 2021 Mar 17;21(6):2118. doi: 10.3390/s21062118.
Spin-dependent tunneling structures are widely used in many spintronic devices and sensors. This paper describes the magnetic tunnel junction (MTJ) characteristics caused by the inhomogeneous magnetic field of ferromagnetic layers. The extremely oblate magnetic ellipsoids have been used to mimic these layers. The strong effect of an inhomogeneous magnetic field on the magnetoresistive layers' interaction was demonstrated. The magnetostatic coupling coefficient is also calculated.
自旋相关隧穿结构广泛应用于许多自旋电子器件和传感器中。本文描述了由铁磁层的非均匀磁场引起的磁隧道结(MTJ)特性。极扁的磁椭球体已被用于模拟这些层。证明了非均匀磁场对磁阻层相互作用的强烈影响。还计算了静磁耦合系数。