Chen Zongbin, Li Tingzhou, Yang Tie, Xu Heju, Khenata Rabah, Gao Yongchun, Wang Xiaotian
Department of Physics, College of Science, North China University of Science and Technology, Tangshan 063210, China.
School of Physical Science and Technology, Southwest University, Chongqing 400715, China.
Nanomaterials (Basel). 2019 Sep 19;9(9):1342. doi: 10.3390/nano9091342.
Spin-gapless semiconductors (SGSs) with Dirac-like band crossings may exhibit massless fermions and dissipationless transport properties. In this study, by applying the density functional theory, novel multiple linear-type spin-gapless semiconducting band structures were found in a synthesized R 3 - c -type bulk PdF compound, which has potential applications in ultra-fast and ultra-low power spintronic devices. The effects of spin-orbit coupling and on-site Coulomb interaction were determined for the bulk material in this study. To explore the potential applications in spintronic devices, we also performed first-principles combined with the non-equilibrium Green's function for the PdF/GaO/PdF magnetic tunnel junction (MTJ). The results suggested that this MTJ exhibits perfect spin filtering and high tunnel magnetoresistance (~5.04 × 10).
具有类狄拉克能带交叉的自旋无隙半导体（SGSs）可能表现出无质量费米子和无耗散输运特性。在本研究中，通过应用密度泛函理论，在合成的R 3 - c型块状PdF化合物中发现了新型的多重线性型自旋无隙半导体能带结构，其在超快和超低功耗自旋电子器件中具有潜在应用。本研究确定了自旋轨道耦合和在位库仑相互作用对块状材料的影响。为了探索在自旋电子器件中的潜在应用，我们还对PdF/GaO/PdF磁性隧道结（MTJ）进行了结合非平衡格林函数的第一性原理计算。结果表明，该MTJ表现出完美的自旋过滤和高隧道磁电阻（~5.04 × 10）。
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