使用聚（3-己基噻吩）（P3HT）提高基于硫化铅（PbS）量子点的短波红外（SWIR）光电探测器的灵敏度

Improving of Sensitivity of PbS Quantum Dot Based SWIR Photodetector Using P3HT.

作者信息

Seo Kyeong-Ho, Jang Jaewon, Kang In Man, Bae Jin-Hyuk

机构信息

School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Korea.

School of Electronics Engineering, Kyungpook National University, Daegu 41566, Korea.

出版信息

Materials (Basel). 2021 Mar 18;14(6):1488. doi: 10.3390/ma14061488.

DOI:10.3390/ma14061488

PMID:33803693

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8003095/

Abstract

In this study, we improved the photosensitivity of the lead sulfide quantum dot (PbS QD)-based shortwave infrared (SWIR: 1.0-2.5 μm) photodetector by blending poly(3-hexylthiophene-2,5-diyl) (P3HT) with PbS QD. The PbS QD used for SWIR photoactive layer showed an absorption peak at 1410 nm. In addition, by using zinc oxide nanoparticles (ZnO NPs) as an interlayer, we obtained the stable current characteristics of our device. To confirm the effectiveness of P3HT on the PbS QD-based SWIR photodetector, we compared the electrical characteristics of a PbS QD-based device with a hybrid P3HT:PbS QD-based device. In the reverse bias region, the current on/off ratio of the PbS QD-based device was 1.3, whereas the on/off ratio of the hybrid P3HT:PbS QD-based device was 2.9; 2.2 times higher than the PbS QD-based device. At -1 V, the on/off ratio of the PbS QD-based device was 1.3 and the on/off ratio of the hybrid P3HT:PbS QD-based device was 3.4; 2.6 times higher than the PbS QD-based device. The fabricated P3HT:PbS QD-based device had the highest on/off ratio when -1 V voltage was applied.

摘要

在本研究中，我们通过将聚（3 - 己基噻吩 - 2,5 - 二亚基）（P3HT）与硫化铅量子点（PbS QD）混合，提高了基于硫化铅量子点的短波红外（SWIR：1.0 - 2.5μm）光电探测器的光敏性。用于SWIR光活性层的PbS QD在1410nm处显示出吸收峰。此外，通过使用氧化锌纳米颗粒（ZnO NPs）作为中间层，我们获得了器件稳定的电流特性。为了证实P3HT对基于PbS QD的SWIR光电探测器的有效性，我们比较了基于PbS QD的器件和基于P3HT：PbS QD混合器件的电学特性。在反向偏置区域，基于PbS QD的器件的电流开/关比为1.3，而基于P3HT：PbS QD混合器件的开/关比为2.9，比基于PbS QD的器件高2.2倍。在 - 1V时，基于PbS QD的器件的开/关比为1.3，基于P3HT：PbS QD混合器件的开/关比为3.4，比基于PbS QD的器件高2.6倍。施加 - 1V电压时，制备的基于P3HT：PbS QD的器件具有最高的开/关比。