Dehzangi Arash, McClintock Ryan, Haddadi Abbas, Wu Donghai, Chevallier Romain, Razeghi Manijeh
Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois, 60208, USA.
Sci Rep. 2019 Mar 21;9(1):5003. doi: 10.1038/s41598-019-41494-6.
Visible/extended short-wavelength infrared photodetectors with a bandstructure-engineered photo-generated carrier extractor based on type-II InAs/AlSb/GaSb superlattices have been demonstrated. The photodetectors are designed to have a 100% cut-off wavelength of ~2.4 μm at 300K, with sensitivity down to visible wavelengths. The photodetectors exhibit room-temperature (300K) peak responsivity of 0.6 A/W at ~1.7 μm, corresponding to a quantum efficiency of 43% at zero bias under front-side illumination, without any anti-reflection coating where the visible cut-on wavelength of the devices is <0.5 µm. With a dark current density of 5.3 × 10 A/cm under -20 mV applied bias at 300K, the photodetectors exhibit a specific detectivity of 4.72 × 10 cm·Hz/W. At 150K, the photodetectors exhibit a dark current density of 1.8 × 10 A/cm and a quantum efficiency of 40%, resulting in a detectivity of 5.56 × 10 cm·Hz/W.
基于II型InAs/AlSb/GaSb超晶格且具有能带结构工程化光生载流子提取器的可见/扩展短波红外光电探测器已得到证实。这些光电探测器设计为在300K时截止波长为2.4μm，截止率为100%，灵敏度可低至可见光波长。这些光电探测器在室温（300K）下，在1.7μm处的峰值响应率为0.6 A/W，对应正面光照下零偏压时的量子效率为43%，器件的可见光开启波长<0.5μm，且未使用任何抗反射涂层。在300K施加-20 mV偏压时，暗电流密度为5.3×10 A/cm²，这些光电探测器的比探测率为4.72×10¹¹ cm·Hz¹/²/W。在150K时，光电探测器的暗电流密度为1.8×10⁻⁶ A/cm²，量子效率为40%，探测率为5.56×10¹¹ cm·Hz¹/²/W。
