Tseng Zong-Liang, Lin Shih-Hung, Tang Jian-Fu, Huang Yu-Ching, Cheng Hsiang-Chih, Huang Wei-Lun, Lee Yi-Ting, Chen Lung-Chien
Department of Electronic Engineering, Ming Chi University of Technology, No. 84, Gungjuan Rd., New Taipei City 24301, Taiwan.
Department of Electronic Engineering, National Yunlin University of Science and Technology, Yunlin 64002, Taiwan.
Polymers (Basel). 2021 Mar 15;13(6):896. doi: 10.3390/polym13060896.
In this study, the performances of red CsPbI-based all-inorganic perovskite quantum-dot light-emitting diodes (IPQLEDs) employing polymeric crystalline Poly(3-hexylthiophene-2,5-diyl) (P3HT), poly(9-vinycarbazole) (PVK), Poly(N,N'-bis-4-butylphenyl-N,N'-bisphenyl)benzidine (Poly-TPD) and 9,9-Bis[4-[(4-ethenylphenyl)methoxy]phenyl]-N2,N7-di-1-naphthalenyl-N2,N7-diphenyl-9H-fluorene-2,7-diamine (VB-FNPD) as the hole transporting layers (HTLs) have been demonstrated. The purpose of this work is an attempt to promote the development of device structures and hole transporting materials for the CsPbI-based IPQLEDs via a comparative study of different HTLs. A full-coverage quantum dot (QD) film without the aggregation can be obtained by coating it with VB-FNPD, and thus, the best external quantum efficiency (EQE) of 7.28% was achieved in the VB-FNPD device. We also reported a standing method to further improve the degree of VB-FNPD polymerization, resulting in the improved device performance, with the EQE of 8.64%.
在本研究中，展示了采用聚（3-己基噻吩-2,5-二基）（P3HT）、聚（9-乙烯基咔唑）（PVK）、聚（N,N'-双-4-丁基苯基-N,N'-双苯基）联苯胺（聚-TPD）和9,9-双[4-[(4-乙烯基苯基)甲氧基]苯基]-N2,N7-二-1-萘基-N2,N7-二苯基-9H-芴-2,7-二胺（VB-FNPD）作为空穴传输层（HTL）的红色CsPbI基全无机钙钛矿量子点发光二极管（IPQLED）的性能。这项工作的目的是通过对不同HTL的比较研究，推动基于CsPbI的IPQLED器件结构和空穴传输材料的发展。通过用VB-FNPD涂覆可以获得无聚集的全覆盖量子点（QD）薄膜，因此，VB-FNPD器件实现了7.28%的最佳外量子效率（EQE）。我们还报道了一种静置方法来进一步提高VB-FNPD的聚合度，从而改善器件性能，EQE达到8.64%。
