Lin Chun-Cheng, Yeh Shao-Yang, Huang Wei-Lun, Xu You-Xun, Huang Yan-Siang, Yeh Tzu-Hung, Tien Ching-Ho, Chen Lung-Chien, Tseng Zong-Liang
Department of Mathematic and Physical Sciences, General Education, R.O.C. Air Force Academy, Kaohsiung 820008, Taiwan.
Department of Electro-Optical Engineering, National Taipei University of Technology, Taipei 10608, Taiwan.
Polymers (Basel). 2020 Sep 29;12(10):2243. doi: 10.3390/polym12102243.
In this paper, a thermally crosslinkable 9,9-Bis[4-[(4-ethenylphenyl)methoxy]phenyl]-N2,N7-di-1-naphthalenyl-N2,N7-diphenyl-9H-fluorene-2,7-diamine (VB-FNPD) film served as the hole transporting layer (HTL) of perovskite CsPbBr quantum-dot light-emitting diodes (QD-LEDs) was investigated and reported. The VB-FNPD film crosslinked at various temperatures in the range of 100~230 °C followed by a spin-coating process to improve their chemical bonds in an attempt to resist the erosion from the organic solvent in the remaining fabrication process. It is shown that the device with VB-FNPD HTL crosslinking at 170 °C has the highest luminance of 7702 cd/m, the maximum current density (J) of 41.98 mA/cm, the maximum current efficiency (CE) of 5.45 Cd/A, and the maximum external quantum efficiency (EQE) of 1.64%. Our results confirm that the proposed thermally crosslinkable VB-FNPD is a candidate for the HTL of QD-LEDs.
在本文中，研究并报道了一种可热交联的9,9-双[4-[(4-乙烯基苯基)甲氧基]苯基]-N2,N7-二-1-萘基-N2,N7-二苯基-9H-芴-2,7-二胺（VB-FNPD）薄膜作为钙钛矿CsPbBr量子点发光二极管（QD-LED）的空穴传输层（HTL）。VB-FNPD薄膜在100~230°C范围内的不同温度下交联，随后进行旋涂工艺以改善其化学键，试图抵抗在剩余制造过程中来自有机溶剂的侵蚀。结果表明，在170°C下交联的具有VB-FNPD HTL的器件具有最高亮度7702 cd/m²、最大电流密度（J）41.98 mA/cm²、最大电流效率（CE）5.45 Cd/A以及最大外量子效率（EQE）1.64%。我们的结果证实，所提出的可热交联的VB-FNPD是QD-LEDs的HTL的候选材料。
