Chizhov Artem, Rumyantseva Marina, Gaskov Alexander
Chemistry Department, Moscow State University, 119991 Moscow, Russia.
Nanomaterials (Basel). 2021 Mar 31;11(4):892. doi: 10.3390/nano11040892.
The review deals with issues related to the principle of operation of resistive semiconductor gas sensors and the use of light activation instead of thermal heating when detecting gases. Information on the photoelectric and optical properties of nanocrystalline oxides SnO, ZnO, InO, and WO, which are the most widely used sensitive materials for semiconductor gas sensors, is presented. The activation of the gas sensitivity of semiconductor materials by both UV and visible light is considered. When activated by UV light, the typical approaches for creating materials are (i) the use of individual metal oxides, (ii) chemical modification with nanoparticles of noble metals and their oxides, (iii) and the creation of nanocomposite materials based on metal oxides. In the case of visible light activation, the approaches used to enhance the photo- and gas sensitivity of wide-gap metal oxides are (i) doping; (ii) spectral sensitization using dyes, narrow-gap semiconductor particles, and quantum dots; and (iii) addition of plasmon nanoparticles. Next, approaches to the description of the mechanism of the sensor response of semiconductor sensors under the action of light are considered.
本综述涉及与电阻式半导体气体传感器的工作原理以及在气体检测中使用光激活而非热加热相关的问题。介绍了纳米晶氧化物SnO、ZnO、InO和WO的光电和光学性质，这些是半导体气体传感器中使用最广泛的敏感材料。考虑了通过紫外光和可见光激活半导体材料的气敏性。当通过紫外光激活时，制备材料的典型方法有：（i）使用单一金属氧化物；（ii）用贵金属及其氧化物的纳米颗粒进行化学改性；（iii）基于金属氧化物制备纳米复合材料。在可见光激活的情况下，用于提高宽带隙金属氧化物的光敏性和气敏性的方法有：（i）掺杂；（ii）使用染料、窄带隙半导体颗粒和量子点进行光谱敏化；（iii）添加等离子体纳米颗粒。接下来，考虑了描述半导体传感器在光作用下的传感器响应机制的方法。
