Gao Yong, Wang Sheng, Wang Jie, You Zhiming, Zhang Jing, Hu Yaocheng, Wu Yue, Fan Jiakun, Li Haipeng, Zhan Qin, Yang Hongguang, Xu Zhanglian
Shaanxi Engineering Research Center of Advanced Nuclear Energy & Shaanxi Key Laboratory of Advanced Nuclear Energy and Technology & School of Energy and Power Engineering, Xi'an Jiaotong University, Xi'an 710049, China.
Department of Engineering Physics, Tsinghua University, Beijing 100084, China.
Materials (Basel). 2021 Mar 5;14(5):1222. doi: 10.3390/ma14051222.
Secondary electron emission (SEE) of the oxygen-free high-conductivity copper (OFHC) target surface in neutron generators limits the stability and improvement of the neutron yield. A novel-type target of titanium-palladium films coated on laser-treated OFHC target substrate was proposed and explored in this work to obtain low secondary electron yield (SEY) without introducing any components. The combination of Ti-Pd films and laser-treated OFHC substrate can effectively suppress secondary electron emission and enhance the adsorption ability to hydrogen isotopes with the existence of Pd film. The surface morphologies, surface chemical states, and SEYs of Ti-Pd films with laser-treated OFHC substrate were studied systematically for the first time. The XPS results showed that the laser-treated OFHC substrate surface was basically covered by Pd film. However, the Pd film surface was partially oxidized, with percentages of 21.31 and 10.02% for PdO and PdO, respectively. The SEYs of Ti-Pd films with laser-treated OFHC substrate were all below 1 within the investigated primary energy range of 100-3000 eV, which would be sufficient for application in neutron generators. Specifically, the maximum SEY () of laser-treated OFHC substrate coated by Ti-Pd films was 0.87 with corresponding incident electron energy of 400 eV.
中子发生器中无氧高导电率铜(OFHC)靶材表面的二次电子发射(SEE)限制了中子产额的稳定性和提升。在本工作中,提出并探索了一种新型靶材,即在经激光处理的OFHC靶材基底上涂覆钛钯薄膜,以在不引入任何其他成分的情况下获得低二次电子产额(SEY)。Ti-Pd薄膜与经激光处理的OFHC基底相结合,能够有效抑制二次电子发射,并在存在钯薄膜的情况下增强对氢同位素的吸附能力。首次系统研究了经激光处理的OFHC基底上Ti-Pd薄膜的表面形貌、表面化学状态和二次电子产额。X射线光电子能谱(XPS)结果表明,经激光处理的OFHC基底表面基本被钯薄膜覆盖。然而,钯薄膜表面部分被氧化,PdO和PdO₂的占比分别为21.31%和10.02%。在100 - 3000 eV的研究初级能量范围内,经激光处理的OFHC基底上Ti-Pd薄膜的二次电子产额均低于1,这对于在中子发生器中的应用来说是足够的。具体而言,涂覆有Ti-Pd薄膜的经激光处理的OFHC基底的最大二次电子产额( )为0.87,对应的入射电子能量为400 eV。