薄膜涂层厚度对非蒸散型吸气剂Ti-Hf-V-Zr涂层开孔泡沫铜基板二次电子发射特性的影响

Influence of Film Coating Thickness on Secondary Electron Emission Characteristics of Non-Evaporable Getter Ti-Hf-V-Zr Coated Open-Cell Copper Foam Substrates.

作者信息

Zhang Jing, Wang Jie, Gao Yong, Hu Yaocheng, Xie Yupeng, You Zhiming, Wang Sheng

机构信息

Shaanxi Engineering Research Center of Advanced Nuclear Energy, Shaanxi Key Laboratory of Advanced Nuclear Energy and Technology, School of Nuclear Science and Technology, School of Energy and Power Engineering, Xi'an Jiaotong University, Xi'an 710049, China.

出版信息

Materials (Basel). 2022 Mar 16;15(6):2185. doi: 10.3390/ma15062185.

DOI:10.3390/ma15062185

PMID:35329637

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8949816/

Abstract

The application of vacuum materials with low secondary electron yield (SEY) is one of the effective methods to mitigate the electron cloud (EC). In this study, the Ti-Hf-V-Zr non-evaporable getter (NEG) film was deposited on open-cell copper foams with different pore sizes for the suppression of electron multipacting effects. Besides, the influence of the film thickness on the secondary electron emission (SEE) characteristics of Ti-Hf-V-Zr NEG film-coated open-cell copper foam substrates was investigated for the first time. The results highlighted that all uncoated and NEG-coated foamed porous copper substrates achieved a low SEY (<1.2), which reduced at least 40% compared to the traditional copper plates, and the foamed porous coppers with 1.34-μm-thick NEG coating had the lowest SEY. Moreover, the surface chemistry and the morphological and structural properties of foamed porous coppers of different pore sizes with and without Ti-Hf-V-Zr NEG films were systematically analyzed.

摘要

应用具有低二次电子产额（SEY）的真空材料是减轻电子云（EC）的有效方法之一。在本研究中，将Ti-Hf-V-Zr非蒸散型吸气剂（NEG）薄膜沉积在具有不同孔径的开孔泡沫铜上，以抑制电子倍增效应。此外，首次研究了薄膜厚度对涂覆有Ti-Hf-V-Zr NEG薄膜的开孔泡沫铜基板二次电子发射（SEE）特性的影响。结果表明，所有未涂覆和涂覆NEG的泡沫多孔铜基板均实现了低SEY（<1.2），与传统铜板相比至少降低了40%，且涂覆有1.34μm厚NEG涂层的泡沫多孔铜具有最低的SEY。此外，还系统分析了有无Ti-Hf-V-Zr NEG薄膜的不同孔径泡沫多孔铜的表面化学以及形态和结构特性。