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还原氧化石墨烯插入聚(3,4-乙撑二氧噻吩):聚苯乙烯磺酸层以增强发光二极管的电学性能

Reduced Graphene Oxide Inserted into PEDOT:PSS Layer to Enhance the Electrical Behaviour of Light-Emitting Diodes.

作者信息

Rodríguez-Mas Fernando, Ferrer Juan Carlos, Alonso José Luis, Fernández de Ávila Susana, Valiente David

机构信息

Communications Engineering Department, Universidad Miguel Hernández, 03202 Elche, Spain.

出版信息

Nanomaterials (Basel). 2021 Mar 5;11(3):645. doi: 10.3390/nano11030645.

DOI:10.3390/nano11030645
PMID:33808017
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7998650/
Abstract

In this study, poly(9-vinylcarbazole) (PVK)-based LEDs doped with reduced graphene oxide (rGO) and cadmium sulphide (CdS) nanocrystals were fabricated by spin-coating. The hybrid LED structure was a layer sequence of glass/indium tin oxide (ITO)/PEDOT:PSS|rGO/PVK/Al. rGO was included in the poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) layer due to its energy bands being close to PEDOT:PSS bands, and the possibility of using water for dispersing both polymer and flakes. Optical properties such as photoluminescence and UV-Vis absorption were not affected by the addition of rGO to the PEDOT:PSS solution. However, PVK-based LEDs with rGO showed increased current density compared to those without rGO in the hole transporting layer. Higher electroluminescence intensities were observed for rGO-enriched LEDs, although the shape of the spectrum was not modified. LEDs including CdS nanocrystals in the poly(9-vinylcarbazole) emissive layer did not show such dependence on the rGO presence. Though the addition of rGO to PEDOT:PSS still produces a slightly higher current density in CdS doped LEDs, this growth is no longer proportional to the rGO load.

摘要

在本研究中,通过旋涂法制备了掺杂有还原氧化石墨烯(rGO)和硫化镉(CdS)纳米晶体的基于聚(9-乙烯基咔唑)(PVK)的发光二极管。混合发光二极管结构为玻璃/氧化铟锡(ITO)/聚(3,4-乙撑二氧噻吩)-聚(苯乙烯磺酸盐)(PEDOT:PSS)|rGO/PVK/Al的层序列。rGO包含在PEDOT:PSS层中,因为其能带与PEDOT:PSS能带接近,且有可能使用水来分散聚合物和薄片。向PEDOT:PSS溶液中添加rGO不会影响光致发光和紫外-可见吸收等光学性质。然而,与空穴传输层中不含rGO的PVK基发光二极管相比,含rGO的PVK基发光二极管的电流密度有所增加。对于富含rGO的发光二极管,观察到更高的电致发光强度,尽管光谱形状未改变。在聚(9-乙烯基咔唑)发射层中包含CdS纳米晶体的发光二极管并未表现出对rGO存在的这种依赖性。虽然向PEDOT:PSS中添加rGO在掺杂CdS的发光二极管中仍会产生略高的电流密度,但这种增长不再与rGO负载量成正比。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/586f/7998650/500534065727/nanomaterials-11-00645-g008.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/586f/7998650/8573ce5199e5/nanomaterials-11-00645-g003.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/586f/7998650/ea27ce3aaee4/nanomaterials-11-00645-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/586f/7998650/7d8aa5e058ce/nanomaterials-11-00645-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/586f/7998650/500534065727/nanomaterials-11-00645-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/586f/7998650/33ee21d238fd/nanomaterials-11-00645-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/586f/7998650/9b5f42efe6ae/nanomaterials-11-00645-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/586f/7998650/8573ce5199e5/nanomaterials-11-00645-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/586f/7998650/f34e36647182/nanomaterials-11-00645-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/586f/7998650/d433078a7e01/nanomaterials-11-00645-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/586f/7998650/ea27ce3aaee4/nanomaterials-11-00645-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/586f/7998650/7d8aa5e058ce/nanomaterials-11-00645-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/586f/7998650/500534065727/nanomaterials-11-00645-g008.jpg

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