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剖析难治性人类癫痫的标志性特征——GABA受体电流衰减的分子决定因素。

Dissecting the Molecular Determinants of GABA Receptors Current Rundown, a Hallmark of Refractory Human Epilepsy.

作者信息

Cifelli Pierangelo, Di Angelantonio Silvia, Alfano Veronica, Morano Alessandra, De Felice Eleonora, Aronica Eleonora, Ruffolo Gabriele, Palma Eleonora

机构信息

Department of Applied Clinical and Biotechnological Sciences, University of L'Aquila, 67100 L'Aquila, Italy.

Department of Physiology and Pharmacology, Istituto Pasteur-Fondazione Cenci Bolognetti, University of Rome Sapienza, 00185 Rome, Italy.

出版信息

Brain Sci. 2021 Mar 30;11(4):441. doi: 10.3390/brainsci11040441.

Abstract

GABA receptors-(Rs) are fundamental for the maintenance of an efficient inhibitory function in the central nervous system (CNS). Their dysfunction is associated with a wide range of CNS disorders, many of which characterized by seizures and epilepsy. Recently, an increased use-dependent desensitization due to a repetitive GABA stimulation (GABA current rundown) of GABARs has been associated with drug-resistant temporal lobe epilepsy (TLE). Here, we aimed to investigate the molecular determinants of GABA current rundown with two different heterologous expression systems ( oocytes and human embryonic kidney cells; HEK) which allowed us to manipulate receptor stoichiometry and to study the GABA current rundown on different GABAR configurations. To this purpose, we performed electrophysiology experiments using two-electrode voltage clamp in oocytes and confirming part of our results in HEK. We found that different degrees of GABA current rundown can be associated with the expression of different GABAR β-subunits reaching the maximum current decrease when functional α1β2 receptors are expressed. Furthermore, the blockade of phosphatases can prevent the current rundown observed in α1β2 GABARs. Since GABAR represents one important therapeutic target in the treatment of human epilepsy, our results could open new perspectives on the therapeutic management of drug-resistant patients showing a GABAergic impairment.

摘要

γ-氨基丁酸受体(GABARs)对于维持中枢神经系统(CNS)高效的抑制功能至关重要。其功能障碍与多种中枢神经系统疾病相关,其中许多以癫痫发作和癫痫为特征。最近,由于GABARs的重复性γ-氨基丁酸刺激(γ-氨基丁酸电流衰减)导致的使用依赖性脱敏增加,已与耐药性颞叶癫痫(TLE)相关联。在此,我们旨在利用两种不同的异源表达系统(卵母细胞和人胚肾细胞;HEK)研究γ-氨基丁酸电流衰减的分子决定因素,这使我们能够操纵受体化学计量,并研究不同GABAR构型上的γ-氨基丁酸电流衰减。为此,我们在卵母细胞中使用双电极电压钳进行了电生理实验,并在HEK中证实了部分结果。我们发现,不同程度的γ-氨基丁酸电流衰减可能与不同GABAR β亚基的表达相关,当功能性α1β2受体表达时,电流下降达到最大值。此外,磷酸酶的阻断可以防止α1β2 GABARs中观察到的电流衰减。由于GABAR是治疗人类癫痫的一个重要治疗靶点,我们的结果可能为显示γ-氨基丁酸能损害的耐药患者的治疗管理开辟新的前景。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a36e/8066365/194b30b05ea8/brainsci-11-00441-g001.jpg

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