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使用氯化钴通过缺氧诱导调节牙髓干细胞分泌谱

Modulation of the Dental Pulp Stem Cell Secretory Profile by Hypoxia Induction Using Cobalt Chloride.

作者信息

Bhandi Shilpa, Al Kahtani Ahmed, Mashyakhy Mohammed, Alsofi Loai, Maganur Prabhadevi C, Vishwanathaiah Satish, Testarelli Luca, Del Giudice Andrea, Mehta Deepak, Vyas Nishant, Patil Vikrant R, Raj A Thirumal, Patil Shankargouda

机构信息

Department of Restorative Dental Sciences, College of Dentistry, Jazan University, Jazan 45142, Saudi Arabia.

Department of Restorative Dental Sciences, College of Dentistry, King Saud Universirty, Riyadh 11451, Saudi Arabia.

出版信息

J Pers Med. 2021 Mar 30;11(4):247. doi: 10.3390/jpm11040247.

Abstract

The action of stem cells is mediated by their paracrine secretions which comprise the secretory profile. Various approaches can be used to modify the secretory profile of stem cells. Creating a hypoxic environment is one method. The present study aims to demonstrate the influence of CoCl in generating hypoxic conditions in a dental pulp stem cell (DPSCs) culture, and the effect of this environment on their secretory profile. DPSCs that were isolated from human permanent teeth were characterized and treated with different concentrations of CoCl to assess their viability by an 3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide (MTT) assay and proliferation by a cell counting kit (CCK)-8 assay. The gene expression level of hypoxia-inducible factor 1-alpha (HIF-1α) was analyzed by quantitative real time polymerase chain reaction (qRT-PCR) to demonstrate a hypoxic environment. Comparative evaluation of the growth factors and cytokines were done by cytometric bead array. Gene expression levels of transcription factors OCT4 and SOX2 were analyzed by qRT-PCR to understand the effect of CoCl on stemness in DPSCs. DPSCs were positive for MSC-specific markers. Doses of CoCl up to 20 µM, did not negatively affect cell viability; in low doses (5 µM), it promoted cell survival. Treatment with 10 µM of CoCl significantly augmented the genetic expression of HIF-1α. Cells treated with 10 µM of CoCl showed changes in the levels of growth factors and cytokines produced. It was very evident that CoCl also increased the expression of OCT4 and SOX2, which is the modulation of stemness of DPSCs. A CoCl treatment-induced hypoxic environment modulates the secretory profile of DPSCs.

摘要

干细胞的作用是由其旁分泌分泌物介导的,这些分泌物构成了分泌谱。可以使用各种方法来改变干细胞的分泌谱。创造低氧环境是一种方法。本研究旨在证明氯化钴在牙髓干细胞(DPSCs)培养中产生低氧条件的影响,以及这种环境对其分泌谱的影响。从人类恒牙中分离出的DPSCs进行了表征,并用不同浓度的氯化钴处理,通过3-(4,5-二甲基噻唑-2-基)-2,5-二苯基四氮唑溴盐(MTT)法评估其活力,通过细胞计数试剂盒(CCK)-8法评估其增殖情况。通过定量实时聚合酶链反应(qRT-PCR)分析缺氧诱导因子1-α(HIF-1α)的基因表达水平,以证明低氧环境。通过细胞计数珠阵列对生长因子和细胞因子进行比较评估。通过qRT-PCR分析转录因子OCT4和SOX2的基因表达水平,以了解氯化钴对DPSCs干性的影响。DPSCs对间充质干细胞特异性标志物呈阳性。高达20µM的氯化钴剂量对细胞活力没有负面影响;在低剂量(5µM)时,它促进细胞存活。用10µM的氯化钴处理显著增加了HIF-1α的基因表达。用10µM的氯化钴处理的细胞显示出生长因子和细胞因子产生水平的变化。很明显,氯化钴还增加了OCT4和SOX2的表达,这是对DPSCs干性的调节。氯化钴处理诱导的低氧环境调节了DPSCs的分泌谱。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/524e/8066657/ad31ee8019fb/jpm-11-00247-g001.jpg

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