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使用集总元件模型对口腔内神经调节进行的舌和软腭的电特性分析。

Electrical Characterization of the Tongue and the Soft Palate Using Lumped-Element Model for Intraoral Neuromodulation.

出版信息

IEEE Trans Biomed Eng. 2021 Oct;68(10):3151-3160. doi: 10.1109/TBME.2021.3070867. Epub 2021 Sep 20.

Abstract

Intraoral functions are results of complex and well-orchestrated sensorimotor loop operations, and therefore vulnerable to small functional or neural defects. To secure the vital intraoral functions, it is important to find a way to favorably intervene the intraoral sensorimotor loop operations. The tongue and the soft palate are heavily associated with intraoral sensorimotor loops, with their dense neural innervations and occupancy of intraoral space. Therefore, electrical stimulation onto the tongue and the soft palate has a great potential to solve the problems in the intraoral functions. However, the electrical interface for both of them have not been characterized yet as a lumped-element model, for designing electrical stimulation and analyzing its effect. In this study, we measured stimulation thresholds to evoke electrotactile feedback and characterized electrical impedance across electrodes using lumped-element models. We found that average perception/discomfort thresholds for the tongue tip, lateral-inferior side of the tongue, and anterolateral side of the soft palate as 0.18/1.31, 0.37/3.99, and 1.19/7.55 mA, respectively. An R-C-R-R-C model represented the electrical interface across the tongue and the soft palate with the highest accuracy. The average component values of the R-C-R-R-C model were found as 2.72kΩ, 45.25nF, 1.27kΩ, 22.09GΩ, and 53.00nF, on average.

摘要

口腔功能是复杂而协调的感觉运动回路操作的结果,因此容易受到小的功能或神经缺陷的影响。为了确保重要的口腔功能,找到一种有利的方法来干预口腔感觉运动回路的操作非常重要。舌和软腭与口腔感觉运动回路密切相关,它们具有密集的神经支配和占据口腔空间。因此,对舌和软腭进行电刺激具有很大的潜力来解决口腔功能的问题。然而,它们的电接口尚未被表征为集总元件模型,用于设计电刺激并分析其效果。在这项研究中,我们测量了刺激阈值以引发电触觉反馈,并使用集总元件模型表征了电极之间的电阻抗。我们发现,舌尖、舌的下外侧和软腭前外侧的平均感知/不适阈值分别为 0.18/1.31、0.37/3.99 和 1.19/7.55 mA。R-C-R-R-C 模型最能准确地表示舌和软腭之间的电接口。R-C-R-R-C 模型的平均元件值分别为 2.72kΩ、45.25nF、1.27kΩ、22.09GΩ 和 53.00nF。

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