• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

用于突触仿真和神经形态计算的环保型燃烧处理薄膜晶体管。

Ecofriendly Solution-Combustion-Processed Thin-Film Transistors for Synaptic Emulation and Neuromorphic Computing.

机构信息

Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China.

Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 72Z, U.K.

出版信息

ACS Appl Mater Interfaces. 2021 Apr 28;13(16):18961-18973. doi: 10.1021/acsami.0c20947. Epub 2021 Apr 13.

DOI:10.1021/acsami.0c20947
PMID:33848133
Abstract

The ecofriendly combustion synthesis (ECS) and self-combustion synthesis (ESCS) have been successfully utilized to deposit high- aluminum oxide (AlO) dielectrics at low temperatures and applied for aqueous InO thin-film transistors (TFTs) accordingly. The ECS and ESCS processes facilitate the formation of high-quality dielectrics at lower temperatures compared to conventional methods based on an ethanol precursor, as confirmed by thermal analysis and chemical composition characterization. The aqueous InO TFTs based on ECS and ESCS-AlO show enhanced electrical characteristics and counterclockwise transfer-curve hysteresis. The memory-like counterclockwise behavior in the transfer curve modulated by the gate bias voltage is comparable to the signal modulation by the neurotransmitters. ECS and ESCS transistors are employed to perform synaptic emulation; various short-term and long-term memory functions are emulated with low operating voltages and high excitatory postsynaptic current levels. High stability and reproducibility are achieved within 240 pulses of long-term synaptic potentiation and depression. The synaptic emulation functions achieved in this work match the demand for artificial neural networks (ANN), and a multilayer perceptron (MLP) is developed using an ECS-AlO synaptic transistor for image recognition. A superior recognition rate of over 90% is achieved based on ECS-AlO synaptic transistors, which facilitates the implementation of the metal-oxide synaptic transistor for future neuromorphic computing via an ecofriendly route.

摘要

环保燃烧合成 (ECS) 和自燃烧合成 (ESCS) 已成功用于在低温下沉积高氧化铝 (AlO) 电介质,并相应地应用于水相氧化铟薄膜晶体管 (TFT)。与基于乙醇前体的传统方法相比,ECS 和 ESCS 工艺在较低温度下有利于形成高质量的电介质,这一点通过热分析和化学成分表征得到了证实。基于 ECS 和 ESCS-AlO 的水相氧化铟 TFT 表现出增强的电特性和非顺时针转移曲线滞后。由栅极偏压调制的类似于记忆的非顺时针转移曲线行为可与神经递质的信号调制相媲美。ECS 和 ESCS 晶体管用于进行突触仿真;通过低工作电压和高兴奋性突触后电流水平,模拟各种短期和长期记忆功能。在 240 个长时程突触增强和抑制脉冲内实现了高稳定性和可重复性。在这项工作中实现的突触仿真功能满足了人工神经网络 (ANN) 的需求,使用 ECS-AlO 突触晶体管开发了一个多层感知器 (MLP) 用于图像识别。基于 ECS-AlO 突触晶体管的识别率超过 90%,这有助于通过环保途径实现金属氧化物突触晶体管在未来神经形态计算中的应用。

相似文献

1
Ecofriendly Solution-Combustion-Processed Thin-Film Transistors for Synaptic Emulation and Neuromorphic Computing.用于突触仿真和神经形态计算的环保型燃烧处理薄膜晶体管。
ACS Appl Mater Interfaces. 2021 Apr 28;13(16):18961-18973. doi: 10.1021/acsami.0c20947. Epub 2021 Apr 13.
2
Artificial Synapse Emulated through Fully Aqueous Solution-Processed Low-Voltage InO Thin-Film Transistor with GdO Solid Electrolyte.通过全水溶液处理的低电压 InO 薄膜晶体管与 GdO 固体电解质模拟人工突触。
ACS Appl Mater Interfaces. 2020 Jan 8;12(1):980-988. doi: 10.1021/acsami.9b14456. Epub 2019 Dec 20.
3
Solution-Processed, Electrolyte-Gated InO Flexible Synaptic Transistors for Brain-Inspired Neuromorphic Applications.溶液处理、电解质门控的 InO 柔性突触晶体管,用于类脑神经形态应用。
ACS Appl Mater Interfaces. 2020 Jan 8;12(1):1061-1068. doi: 10.1021/acsami.9b18605. Epub 2019 Dec 23.
4
Facile and environmentally friendly solution-processed aluminum oxide dielectric for low-temperature, high-performance oxide thin-film transistors.用于低温、高性能氧化物薄膜晶体管的简便且环保的溶液处理氧化铝电介质。
ACS Appl Mater Interfaces. 2015 Mar 18;7(10):5803-10. doi: 10.1021/am508775c. Epub 2015 Mar 3.
5
Fully solution-processed low-voltage aqueous In2O3 thin-film transistors using an ultrathin ZrO(x) dielectric.使用超薄 ZrO(x) 电介质的全溶液处理低电压水性 In2O3 薄膜晶体管。
ACS Appl Mater Interfaces. 2014 Oct 22;6(20):17364-9. doi: 10.1021/am505602w. Epub 2014 Oct 9.
6
An Artificial Neural Network Based on Oxide Synaptic Transistor for Accurate and Robust Image Recognition.基于氧化物突触晶体管的人工神经网络用于精确且稳健的图像识别。
Micromachines (Basel). 2024 Mar 24;15(4):433. doi: 10.3390/mi15040433.
7
A flexible dual-gate hetero-synaptic transistor for spatiotemporal information processing.一种用于时空信息处理的柔性双栅异突触晶体管。
Nanoscale Adv. 2022 Apr 20;4(11):2412-2419. doi: 10.1039/d2na00146b. eCollection 2022 May 31.
8
Emulation of Synaptic Plasticity on a Cobalt-Based Synaptic Transistor for Neuromorphic Computing.基于钴的突触晶体管用于神经形态计算的突触可塑性仿真。
ACS Appl Mater Interfaces. 2022 Mar 9;14(9):11864-11872. doi: 10.1021/acsami.1c19916. Epub 2022 Mar 1.
9
Biodegradable Oxide Neuromorphic Transistors for Neuromorphic Computing and Anxiety Disorder Emulation.可生物降解氧化物神经形态晶体管用于神经形态计算和焦虑症模拟。
ACS Appl Mater Interfaces. 2023 Oct 11;15(40):47640-47648. doi: 10.1021/acsami.3c07671. Epub 2023 Sep 29.
10
Biocompatible Potato-Starch Electrolyte-Based Coplanar Gate-Type Artificial Synaptic Transistors on Paper Substrates.基于生物相容的马铃薯淀粉电解质的平面栅型纸基人工突触晶体管。
Int J Mol Sci. 2022 Dec 14;23(24):15901. doi: 10.3390/ijms232415901.

引用本文的文献

1
Preparation of High-Performance Transparent AlO Dielectric Films via Self-Exothermic Reaction Based on Solution Method and Applications.基于溶液法通过自放热反应制备高性能透明AlO介电薄膜及其应用
Micromachines (Basel). 2024 Sep 11;15(9):1140. doi: 10.3390/mi15091140.
2
Low-Cost, High-Efficiency Aluminum Zinc Oxide Synaptic Transistors: Blue LED Stimulation for Enhanced Neuromorphic Computing Applications.低成本、高效能的铝锌氧化物突触晶体管:用于增强神经形态计算应用的蓝光发光二极管刺激
Biomimetics (Basel). 2024 Sep 11;9(9):547. doi: 10.3390/biomimetics9090547.
3
Investigation on Atomic Bonding Structure of Solution-Processed Indium-Zinc-Oxide Semiconductors According to Doped Indium Content and Its Effects on the Transistor Performance.
基于掺杂铟含量的溶液法制备铟锌氧化物半导体原子键合结构及其对晶体管性能影响的研究
Materials (Basel). 2022 Sep 29;15(19):6763. doi: 10.3390/ma15196763.
4
Sputtered Electrolyte-Gated Transistor with Temperature-Modulated Synaptic Plasticity Behaviors.具有温度调制突触可塑性行为的溅射电解质门控晶体管。
ACS Appl Electron Mater. 2022 Jun 28;4(6):2933-2942. doi: 10.1021/acsaelm.2c00395. Epub 2022 May 18.
5
Design of Functionally Stacked Channels of Oxide Thin-Film Transistors to Mimic Precise Ultralow-Light-Irradiated Synaptic Weight Modulation.用于模拟精确超低光照射突触权重调制的氧化物薄膜晶体管功能堆叠通道设计
Micromachines (Basel). 2022 Mar 26;13(4):526. doi: 10.3390/mi13040526.