Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China.
Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 72Z, U.K.
ACS Appl Mater Interfaces. 2021 Apr 28;13(16):18961-18973. doi: 10.1021/acsami.0c20947. Epub 2021 Apr 13.
The ecofriendly combustion synthesis (ECS) and self-combustion synthesis (ESCS) have been successfully utilized to deposit high- aluminum oxide (AlO) dielectrics at low temperatures and applied for aqueous InO thin-film transistors (TFTs) accordingly. The ECS and ESCS processes facilitate the formation of high-quality dielectrics at lower temperatures compared to conventional methods based on an ethanol precursor, as confirmed by thermal analysis and chemical composition characterization. The aqueous InO TFTs based on ECS and ESCS-AlO show enhanced electrical characteristics and counterclockwise transfer-curve hysteresis. The memory-like counterclockwise behavior in the transfer curve modulated by the gate bias voltage is comparable to the signal modulation by the neurotransmitters. ECS and ESCS transistors are employed to perform synaptic emulation; various short-term and long-term memory functions are emulated with low operating voltages and high excitatory postsynaptic current levels. High stability and reproducibility are achieved within 240 pulses of long-term synaptic potentiation and depression. The synaptic emulation functions achieved in this work match the demand for artificial neural networks (ANN), and a multilayer perceptron (MLP) is developed using an ECS-AlO synaptic transistor for image recognition. A superior recognition rate of over 90% is achieved based on ECS-AlO synaptic transistors, which facilitates the implementation of the metal-oxide synaptic transistor for future neuromorphic computing via an ecofriendly route.
环保燃烧合成 (ECS) 和自燃烧合成 (ESCS) 已成功用于在低温下沉积高氧化铝 (AlO) 电介质,并相应地应用于水相氧化铟薄膜晶体管 (TFT)。与基于乙醇前体的传统方法相比,ECS 和 ESCS 工艺在较低温度下有利于形成高质量的电介质,这一点通过热分析和化学成分表征得到了证实。基于 ECS 和 ESCS-AlO 的水相氧化铟 TFT 表现出增强的电特性和非顺时针转移曲线滞后。由栅极偏压调制的类似于记忆的非顺时针转移曲线行为可与神经递质的信号调制相媲美。ECS 和 ESCS 晶体管用于进行突触仿真;通过低工作电压和高兴奋性突触后电流水平,模拟各种短期和长期记忆功能。在 240 个长时程突触增强和抑制脉冲内实现了高稳定性和可重复性。在这项工作中实现的突触仿真功能满足了人工神经网络 (ANN) 的需求,使用 ECS-AlO 突触晶体管开发了一个多层感知器 (MLP) 用于图像识别。基于 ECS-AlO 突触晶体管的识别率超过 90%,这有助于通过环保途径实现金属氧化物突触晶体管在未来神经形态计算中的应用。