Fang Xuecong, Ning Honglong, Zhang Zihan, Yao Rihui, Huang Yucheng, Yang Yonglin, Cheng Weixin, Jin Shaojie, Luo Dongxiang, Peng Junbiao
Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, School of Materials Sciences and Engineering, South China University of Technology, Guangzhou 510640, China.
Huangpu Hydrogen Innovation Center/Guangzhou Key Laboratory for Clean Energy and Materials, School of Chemistry and Chemical Engineering, Guangzhou University, Guangzhou 510006, China.
Micromachines (Basel). 2024 Sep 11;15(9):1140. doi: 10.3390/mi15091140.
As the competition intensifies in enhancing the integration and performance of integrated circuits, in accordance with the famous Moore's Law, higher performance and smaller size requirements are imposed on the dielectric layers in electronic devices. Compared to vacuum methods, the production cost of preparing dielectric layers via solution methods is lower, and the preparation cycle is shorter. This paper utilizes a low-temperature self-exothermic reaction based on the solution method to prepare high-performance AlO dielectric thin films that are compatible with flexible substrates. In this paper, we first established two non-self-exothermic systems: one with pure aluminum nitrate and one with pure aluminum acetylacetonate. Additionally, we set up one self-exothermic system where aluminum nitrate and aluminum acetylacetonate were mixed in a 1:1 ratio. Tests revealed that the leakage current density and dielectric constant of the self-exothermic system devices were significantly optimized compared to the two non-self-exothermic system devices, indicating that the self-exothermic reaction can effectively improve the quality of the dielectric film. This paper further established two self-exothermic systems with aluminum nitrate and aluminum acetylacetonate mixed in 2:1 and 1:2 ratios, respectively, for comparison. The results indicate that as the proportion of aluminum nitrate increases, the overall dielectric performance of the devices improves. The best overall performance occurs when aluminum nitrate and aluminum acetylacetonate are mixed in a ratio of 2:1: The film surface is smooth without cracks; the surface roughness is 0.747 ± 0.045 nm; the visible light transmittance reaches up to 98%; on the basis of this film, MIM devices were fabricated, with tested leakage current density as low as 1.08 × 10 A/cm @1 MV and a relative dielectric constant as high as 8.61 ± 0.06, demonstrating excellent electrical performance.
随着集成电路集成度和性能提升的竞争日益激烈，按照著名的摩尔定律，对电子器件中的介电层提出了更高的性能和更小尺寸的要求。与真空方法相比，通过溶液法制备介电层的生产成本更低，制备周期更短。本文利用基于溶液法的低温自热反应制备与柔性基板兼容的高性能AlO介电薄膜。本文首先建立了两个非自热体系：一个是纯硝酸铝体系，另一个是纯乙酰丙酮铝体系。此外，还建立了一个自热体系，其中硝酸铝和乙酰丙酮铝按1:1比例混合。测试表明，与两个非自热体系器件相比，自热体系器件的漏电流密度和介电常数得到了显著优化，这表明自热反应能有效提高介电薄膜的质量。本文进一步建立了两个分别将硝酸铝和乙酰丙酮铝按2:1和1:2比例混合的自热体系进行比较。结果表明，随着硝酸铝比例的增加，器件的整体介电性能提高。当硝酸铝和乙酰丙酮铝按2:1比例混合时，整体性能最佳：薄膜表面光滑无裂纹；表面粗糙度为0.747±0.045nm；可见光透过率高达98%；在此薄膜基础上制备了MIM器件，测试得到的漏电流密度低至1.08×10 A/cm@1 MV，相对介电常数高达8.61±0.06，展现出优异的电学性能。
