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少层二硫化钨中激子形成过程中分离电子和空穴的超快非平衡动力学过程

Ultrafast nonequilibrium dynamic process of separate electrons and holes during exciton formation in few-layer tungsten disulfide.

作者信息

Chen Junjie, Guo Sen, Lin Dabin, Nie Zhaogang, Huang Chung-Che, Hu Kaige, Wang Cheng, Zhang Fangteng, Zhao Weiren, Zhang Wenchun

机构信息

School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, Guangdong, China.

出版信息

Phys Chem Chem Phys. 2021 Mar 28;23(12):7135-7144. doi: 10.1039/d1cp00250c. Epub 2021 Mar 23.

Abstract

Femtosecond transient absorption spectroscopy has been employed to unravel separate initial nonequilibrium dynamic processes of photo-injected electrons and holes during the formation process of the lowest excitons at the K-valley in few-layer tungsten disulfide. Charge carrier thermalization and cooling, as well as concomitant many-body effects on the exciton resonances, are distinguished. The thermalization of holes is observed to be faster than that of electrons. Both of them proceed predominantly via carrier-carrier scattering, as evidenced by the observed dependence of the thermalization time on pump fluences. The fluence dependent time constants also suggest that the subsequent cooling for electrons is probably dominated by acoustic phonons, whereas for holes it is mostly controlled by LO phonons. An extremely fast red- and blue-shift crossover followed by a slow blue-shift of exciton resonance was observed in the temporal evolution of exciton resonances by resonant exciton A excitation. The rapid red-shift could be due to the strong screening of the Coulomb interaction between quasi-free charge carriers in electron-hole plasma. The subsequent slow blue-shift is the net result of the competition among many-body effects in the hot-exciton cooling process. Our findings elucidate the carrier-selective ultrafast dynamics and their many-body effects, underpinning new possibilities for developing optoelectronic devices based on transport properties of a single type of carrier.

摘要

飞秒瞬态吸收光谱已被用于揭示在少层二硫化钨的K谷处最低激子形成过程中光注入电子和空穴的独立初始非平衡动力学过程。区分了载流子热化和冷却以及对激子共振的伴随多体效应。观察到空穴的热化比电子快。两者主要通过载流子-载流子散射进行,热化时间对泵浦通量的依赖性证明了这一点。通量依赖的时间常数还表明,随后电子的冷却可能主要由声学声子主导,而空穴的冷却主要由LO声子控制。通过共振激子A激发,在激子共振的时间演化中观察到激子共振先有极快的红移和蓝移交叉,随后是缓慢的蓝移。快速红移可能是由于电子-空穴等离子体中准自由电荷载流子之间库仑相互作用的强烈屏蔽。随后的缓慢蓝移是热激子冷却过程中多体效应之间竞争的净结果。我们的研究结果阐明了载流子选择性超快动力学及其多体效应,为基于单一类型载流子传输特性开发光电器件奠定了新的可能性。

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