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基于全氧化物的合成反铁磁超晶格中的孤子介导磁反转

Soliton-Mediated Magnetic Reversal in an All-Oxide-Based Synthetic Antiferromagnetic Superlattice.

作者信息

Zhang Kexuan, Zhernenkov Kirill, Saerbeck Thomas, Glavic Artur, Qu Lili, Kinane Christy J, Caruana Andrew J, Hua Enda, Gao Guanyin, Jin Feng, Ge Binghui, Cheng Feng, Pütter Sabine, Koutsioubas Alexandros, Mattauch Stefan, Brueckel Thomas, Su Yixi, Wang Lingfei, Wu Wenbin

机构信息

Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China.

Jülich Centre for Neutron Science JCNS at Heinz Maier-Leibnitz Zentrum, Forschungszentrum Jülich, Lichtenbergstr. 1, D-85747 Garching, Germany.

出版信息

ACS Appl Mater Interfaces. 2021 May 5;13(17):20788-20795. doi: 10.1021/acsami.1c02506. Epub 2021 Apr 20.

Abstract

All-oxide-based synthetic antiferromagnets (SAFs) are attracting intense research interest due to their superior tunability and great potentials for antiferromagnetic spintronic devices. In this work, using the LaCaMnO/CaRuTiO (LCMO/CRTO) superlattice as a model SAF, we investigated the layer-resolved magnetic reversal mechanism by polarized neutron reflectivity. We found that the reversal of LCMO layer moments is mediated by nucleation, expansion, and shrinkage of a magnetic soliton. This unique magnetic reversal process creates a reversed magnetic configuration of the SAF after a simple field cycling. Therefore, it can enable vertical data transfer from the bottom to the top of the superlattice. The physical origin of this intriguing magnetic reversal process could be attributed to the cooperation of the surface spin-flop effect and enhanced uniaxial magnetic anisotropy of the bottom LCMO layer. This work may pave a way to utilize all-oxide-based SAFs for three-dimensional spintronic devices with vertical data transfer and high-density data storage.

摘要

全氧化物基合成反铁磁体(SAFs)因其卓越的可调性以及在反铁磁自旋电子器件方面的巨大潜力而吸引了广泛的研究兴趣。在这项工作中,我们以LaCaMnO/CaRuTiO(LCMO/CRTO)超晶格作为模型SAF,通过极化中子反射率研究了层分辨的磁反转机制。我们发现,LCMO层磁矩的反转是由磁孤子的成核、扩展和收缩介导的。这种独特的磁反转过程在简单的场循环后会产生SAF的反向磁构型。因此,它能够实现从超晶格底部到顶部的垂直数据传输。这种有趣的磁反转过程的物理起源可能归因于表面自旋翻转效应与底部LCMO层增强的单轴磁各向异性的协同作用。这项工作可能为利用全氧化物基SAF制造具有垂直数据传输和高密度数据存储功能的三维自旋电子器件铺平道路。

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