Legrand William, Maccariello Davide, Ajejas Fernando, Collin Sophie, Vecchiola Aymeric, Bouzehouane Karim, Reyren Nicolas, Cros Vincent, Fert Albert
Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, Palaiseau, France.
Nat Mater. 2020 Jan;19(1):34-42. doi: 10.1038/s41563-019-0468-3. Epub 2019 Sep 2.
Room-temperature skyrmions in ferromagnetic films and multilayers show promise for encoding information bits in new computing technologies. Despite recent progress, ferromagnetic order generates dipolar fields that prevent ultrasmall skyrmion sizes, and allows a transverse deflection of moving skyrmions that hinders their efficient manipulation. Antiferromagnetic skyrmions shall lift these limitations. Here we demonstrate that room-temperature antiferromagnetic skyrmions can be stabilized in synthetic antiferromagnets (SAFs), in which perpendicular magnetic anisotropy, antiferromagnetic coupling and chiral order can be adjusted concurrently. Utilizing interlayer electronic coupling to an adjacent bias layer, we demonstrate that spin-spiral states obtained in a SAF with vanishing perpendicular magnetic anisotropy can be turned into isolated antiferromagnetic skyrmions. We also provide model-based estimates of skyrmion size and stability, showing that room-temperature antiferromagnetic skyrmions below 10 nm in radius can be anticipated in further optimized SAFs. Antiferromagnetic skyrmions in SAFs may thus solve major issues associated with ferromagnetic skyrmions for low-power spintronic devices.
铁磁薄膜和多层膜中的室温斯格明子有望在新型计算技术中编码信息位。尽管最近取得了进展,但铁磁序会产生偶极场,这会阻止斯格明子尺寸超小,并会使移动的斯格明子发生横向偏转,从而阻碍其有效操控。反铁磁斯格明子应能克服这些限制。在此,我们证明室温反铁磁斯格明子可在合成反铁磁体(SAF)中稳定存在,在这种材料中,垂直磁各向异性、反铁磁耦合和手性序可同时得到调节。利用与相邻偏置层的层间电子耦合,我们证明在垂直磁各向异性消失的SAF中获得的自旋螺旋态可转变为孤立的反铁磁斯格明子。我们还提供了基于模型的斯格明子尺寸和稳定性估计,表明在进一步优化的SAF中有望实现半径小于10纳米的室温反铁磁斯格明子。因此,SAF中的反铁磁斯格明子可能解决与用于低功耗自旋电子器件的铁磁斯格明子相关的主要问题。